Showing results 1 to 4 of 4
| Title | Author(s) | Issue Date | |
|---|---|---|---|
3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes with P-GaN Termination Journal:IEEE Electron Device Letters | 2020 | ||
First Demonstration of Vertical Superjunction Diode in GaN Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2022 | ||
(Invited) Multi-Channel AlGaN/GaN Power Rectifiers: Breakthrough Performance up to 10 kV Proceeding/Conference:ECS Transactions | 2021 | ||
Monolithically Integrated Self-Biased Circulator for mmWave T/R MMIC Applications Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2021 |