Showing results 1 to 7 of 7
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Conduction mechanisms in MOS gate dielectric films Journal:Microelectronics Reliability | 2004 | ||
Effects of TCE concentration on oxide-charge and interface properties of SiO2 thermally grown on SiC Journal:Solid-State Electronics | 2005 | ||
GaN MQW microdisks pivoted on Si substrate Proceeding/Conference:Physica Status Solidi (A) Applications and Materials Science | 2007 | ||
Improved I-V characteristics of SiC MOSFETs by TCE thermal gate oxidation Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC | 2006 | ||
Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler-Nordheim electron injection Journal:Microelectronics Reliability | 2006 | ||
Kinetics of thermal oxidation of 6H silicon carbide in oxygen plus trichloroethylene Journal:Journal of the Electrochemical Society | 2005 | ||
Ultra-shallow n +p junction formed by PH 3 and AsH 3 plasma immersion ion implantation Journal:Microelectronics Reliability | 2002 |