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| Title | Author(s) | Issue Date | |
|---|---|---|---|
First Demonstration of High-Sensitivity (NEP<1fWHz<sup>-1/2</sup>) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic Integration of Ga<inf>2</inf>O<inf>3</inf>Photodetectors and Oxide Thin-Film-Transistors Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | 2022 |