Epitaxial InGaN on Si: n-InGaN/ p-Si hetero-junction for potential photovoltaic applications

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Grant Data
Project Title
Epitaxial InGaN on Si: n-InGaN/ p-Si hetero-junction for potential photovoltaic applications
Principal Investigator
Professor Xie, Mao Hai   (Principal Investigator (PI))
Duration
36
Start Date
2008-09-01
Amount
343700
Conference Title
Epitaxial InGaN on Si: n-InGaN/ p-Si hetero-junction for potential photovoltaic applications
Presentation Title
Keywords
hetero-junction, InGaN on Si, MBE, solar cell
Discipline
Materials Sciences,Physics
Panel
Physical Sciences (P)
HKU Project Code
HKU 704808P
Grant Type
General Research Fund (GRF)
Funding Year
2008
Status
Completed