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Conference Paper: Dynamics of self-organized epitaxial island formation under controlled annealing

TitleDynamics of self-organized epitaxial island formation under controlled annealing
Authors
KeywordsEpitaxy
Pattern formation
Phase field method
Surface morphology
Issue Date2007
PublisherSpringer.
Citation
IUTAM Symposium on Mechanical Behavior and Micro-Mechanics of Nanostructured Materials, Beijing, China, 27-30 June, 2005. In Solid Mechanics And Its Applications, 2007, v. 144, p. 219-228 How to Cite?
AbstractIt is a well known fact that strain-driven self-assembly via Stranski-Krastonov growth is a promising way to fabricate ordered quantum dot array. However, control of the morphology remains to be a critical issue. One approach towards controlled self-assembly is, but not limited to, epitaxial growth on patterned substrates or patterned epilayers. The possibility of controlling the growth morphology of quantum dots upon patterned substrates and patterned epilayers is explored by numerical studies of three-dimensional phase field simulation. The results indicate that, by creating appropriate patterns, such as topographical pattern created in the substrate or epilayer, and periodically strained substrate, etc, the initial strain distributions on the surfaces of the substrate or epilayer can be altered, and thus the subsequent evolution path of surface morphology under annealing can be controlled efficiently. This may lead to highly ordered quantum dot array. © 2007 Springer.
Persistent Identifierhttp://hdl.handle.net/10722/100396
ISSN
2020 SCImago Journal Rankings: 0.128
References

 

DC FieldValueLanguage
dc.contributor.authorNi, Yen_HK
dc.contributor.authorSoh, AKen_HK
dc.contributor.authorHe, LHen_HK
dc.date.accessioned2010-09-25T19:08:23Z-
dc.date.available2010-09-25T19:08:23Z-
dc.date.issued2007en_HK
dc.identifier.citationIUTAM Symposium on Mechanical Behavior and Micro-Mechanics of Nanostructured Materials, Beijing, China, 27-30 June, 2005. In Solid Mechanics And Its Applications, 2007, v. 144, p. 219-228en_HK
dc.identifier.issn0925-0042en_HK
dc.identifier.urihttp://hdl.handle.net/10722/100396-
dc.description.abstractIt is a well known fact that strain-driven self-assembly via Stranski-Krastonov growth is a promising way to fabricate ordered quantum dot array. However, control of the morphology remains to be a critical issue. One approach towards controlled self-assembly is, but not limited to, epitaxial growth on patterned substrates or patterned epilayers. The possibility of controlling the growth morphology of quantum dots upon patterned substrates and patterned epilayers is explored by numerical studies of three-dimensional phase field simulation. The results indicate that, by creating appropriate patterns, such as topographical pattern created in the substrate or epilayer, and periodically strained substrate, etc, the initial strain distributions on the surfaces of the substrate or epilayer can be altered, and thus the subsequent evolution path of surface morphology under annealing can be controlled efficiently. This may lead to highly ordered quantum dot array. © 2007 Springer.en_HK
dc.languageengen_HK
dc.publisherSpringer.en_HK
dc.relation.ispartofSolid Mechanics and its Applicationsen_HK
dc.subjectEpitaxyen_HK
dc.subjectPattern formationen_HK
dc.subjectPhase field methoden_HK
dc.subjectSurface morphologyen_HK
dc.titleDynamics of self-organized epitaxial island formation under controlled annealingen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailSoh, AK:aksoh@hkucc.hku.hken_HK
dc.identifier.authoritySoh, AK=rp00170en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/978-1-4020-5624-6_22-
dc.identifier.scopuseid_2-s2.0-84860741009en_HK
dc.identifier.hkuros129042en_HK
dc.identifier.hkuros156705-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84860741009&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume144en_HK
dc.identifier.spage219en_HK
dc.identifier.epage228en_HK
dc.identifier.scopusauthoridNi, Y=55211373900en_HK
dc.identifier.scopusauthoridSoh, AK=7006795203en_HK
dc.identifier.scopusauthoridHe, LH=55211112600en_HK
dc.identifier.issnl0925-0042-

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