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Conference Paper: Anomalous Temperature Dependence of Photoluminescence of Self-assembled InGaAsN Quantum Dots

TitleAnomalous Temperature Dependence of Photoluminescence of Self-assembled InGaAsN Quantum Dots
Authors
Issue Date2005
PublisherEuropean Materials Research Society (E-MRS)
Citation
European Materials Research Society (E-MRS) Fall Meeting, Warsaw, Poland, 5-9 September 2005 How to Cite?
AbstractDilute nitride alloy III-V semiconductors are being paid intense attention, due to the novel physics induced by the nitrogen incorporation in small percentages. Following the development of quaternary InGaAsN quantum wells, lower-dimensional InGaAsN quantum dots (QDs) have attracted an increasing interest and been regarded as promising structures for extending the emission wavelength to 1.55μm and beyond. In this report, we present variable-temperature photoluminescence (PL) spectra of self-assembled InGaAsN/GaAs QDs grown on GaAs substrate with molecular beam epitaxy. Two kinds of In0.3Ga0.7AsN0.005 and In0.5Ga0.5AsN0.006 QDs have been studied. Anomalous temperature dependence of their PL spectra was found. A newly developed luminescence model for localized states was employed to quantitatively interpret the PL results. The carrier re-distribution within different QDs is found to be responsible for the observed anomalies.
Persistent Identifierhttp://hdl.handle.net/10722/109731

 

DC FieldValueLanguage
dc.contributor.authorWei, Zen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorFan, WJ-
dc.contributor.authorYoon, SF-
dc.date.accessioned2010-09-26T01:34:49Z-
dc.date.available2010-09-26T01:34:49Z-
dc.date.issued2005en_HK
dc.identifier.citationEuropean Materials Research Society (E-MRS) Fall Meeting, Warsaw, Poland, 5-9 September 2005-
dc.identifier.urihttp://hdl.handle.net/10722/109731-
dc.description.abstractDilute nitride alloy III-V semiconductors are being paid intense attention, due to the novel physics induced by the nitrogen incorporation in small percentages. Following the development of quaternary InGaAsN quantum wells, lower-dimensional InGaAsN quantum dots (QDs) have attracted an increasing interest and been regarded as promising structures for extending the emission wavelength to 1.55μm and beyond. In this report, we present variable-temperature photoluminescence (PL) spectra of self-assembled InGaAsN/GaAs QDs grown on GaAs substrate with molecular beam epitaxy. Two kinds of In0.3Ga0.7AsN0.005 and In0.5Ga0.5AsN0.006 QDs have been studied. Anomalous temperature dependence of their PL spectra was found. A newly developed luminescence model for localized states was employed to quantitatively interpret the PL results. The carrier re-distribution within different QDs is found to be responsible for the observed anomalies.-
dc.languageengen_HK
dc.publisherEuropean Materials Research Society (E-MRS)-
dc.relation.ispartofEuropean Materials Research Society (E-MRS) Fall Meetingen_HK
dc.titleAnomalous Temperature Dependence of Photoluminescence of Self-assembled InGaAsN Quantum Dotsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailWei, Z: weizhifeng@yahoo.comen_HK
dc.identifier.emailXu, SJ: sjxu@hkucc.hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.hkuros149466en_HK

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