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Conference Paper: Deep level defects in 6H silicon carbide induced by particles irradiations

TitleDeep level defects in 6H silicon carbide induced by particles irradiations
Authors
Ling, FCCChen, XGong, MGe, WKWang, JNYang, CLBrauer, GAnwand, WSkorupa, WBeling, CDFung, SHYWang, HYWeng, HM
Issue Date2005
Citation
The 15th National Conference of Semiconductor Physics, Chengdu, China, 16-19 October 2005 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/109745

 

DC FieldValueLanguage
dc.contributor.authorLing, FCCen_HK
dc.contributor.authorChen, Xen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorGe, WKen_HK
dc.contributor.authorWang, JNen_HK
dc.contributor.authorYang, CLen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, SHYen_HK
dc.contributor.authorWang, HYen_HK
dc.contributor.authorWeng, HMen_HK
dc.date.accessioned2010-09-26T01:35:26Z-
dc.date.available2010-09-26T01:35:26Z-
dc.date.issued2005en_HK
dc.identifier.citationThe 15th National Conference of Semiconductor Physics, Chengdu, China, 16-19 October 2005-
dc.identifier.urihttp://hdl.handle.net/10722/109745-
dc.languageengen_HK
dc.relation.ispartofThe National Conference of Semiconductor Physicsen_HK
dc.titleDeep level defects in 6H silicon carbide induced by particles irradiationsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, SHY: sfung@hkucc.hku.hken_HK
dc.identifier.authorityLing, FCC=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, SHY=rp00695en_HK
dc.identifier.hkuros128945en_HK

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