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Article: An analytical approach for studying diffusion and drift effects of positrons at the metal/semi-insulating GaAs interface

TitleAn analytical approach for studying diffusion and drift effects of positrons at the metal/semi-insulating GaAs interface
Authors
Hu, YFFung, SBeling, CD
KeywordsBeam
Diffusion
Drift
GaAs
Metal/Semiconductor Contact
Positron
Semi-Insulating
Issue Date1997
PublisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.net
Citation
Materials Science Forum, 1997, v. 255-257, p. 539-541 How to Cite?
AbstractThe positron diffusion and drift in Semi-insulating(SI) GaAs has been studied by the slowpositron beam technique in metal/GaAs Schottky contact systems. A three layer model involving a metal overlayer, an extended interfacial region and the bulk was adopted for which an analytical method for finding the distribution of positrons under an applied uniform electric field is presented. Results from these calculations are found to be good agreement with our experimental data and VEPFIT fitting results.
Persistent Identifierhttp://hdl.handle.net/10722/109781
ISSN
0255-5476
2020 SCImago Journal Rankings: 0.192
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorHu, YFen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2010-09-26T01:37:00Z-
dc.date.available2010-09-26T01:37:00Z-
dc.date.issued1997en_HK
dc.identifier.citationMaterials Science Forum, 1997, v. 255-257, p. 539-541en_HK
dc.identifier.issn0255-5476en_HK
dc.identifier.urihttp://hdl.handle.net/10722/109781-
dc.description.abstractThe positron diffusion and drift in Semi-insulating(SI) GaAs has been studied by the slowpositron beam technique in metal/GaAs Schottky contact systems. A three layer model involving a metal overlayer, an extended interfacial region and the bulk was adopted for which an analytical method for finding the distribution of positrons under an applied uniform electric field is presented. Results from these calculations are found to be good agreement with our experimental data and VEPFIT fitting results.en_HK
dc.languageengen_HK
dc.publisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.neten_HK
dc.relation.ispartofMaterials Science Forumen_HK
dc.rightsMaterials Science Forum. Copyright © Trans Tech Publications Ltd.en_HK
dc.subjectBeamen_HK
dc.subjectDiffusionen_HK
dc.subjectDriften_HK
dc.subjectGaAsen_HK
dc.subjectMetal/Semiconductor Contacten_HK
dc.subjectPositronen_HK
dc.subjectSemi-Insulatingen_HK
dc.titleAn analytical approach for studying diffusion and drift effects of positrons at the metal/semi-insulating GaAs interfaceen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0255-5476&volume=255-257&spage=539&epage=541&date=1997&atitle=An+Analytical+Approach+for+Studying+Diffusion+and+Drift+Effects+of+Positrons+at+the+Metal/Semi-Insulating+GaAs+Interfaceen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0031377707en_HK
dc.identifier.hkuros29702en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031377707&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume255-257en_HK
dc.identifier.spage539en_HK
dc.identifier.epage541en_HK
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridHu, YF=7407119615en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.issnl0255-5476-

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