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Article: Recent advances in defect characterization in 6H-SiC using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy
Title | Recent advances in defect characterization in 6H-SiC using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy |
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Authors | |
Issue Date | 2000 |
Publisher | Trans Tech Publications. The Journal's web site is located at http://www.ttp.net/1012-0386.html |
Citation | Diffusion And Defect Data. Pt A Defect And Diffusion Forum, 2000, v. 183, p. 1-24 How to Cite? |
Abstract | Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy are two major techniques currently used in studying point defects in 6H-SiC. These techniques are briefly described. A review of studies on asgrown, electron-irradiated and ion-implanted 6H-SiC is made. Studies employing Deep Level Transient Spectroscopy are considered first followed by those employing Positron Annihilation Spectroscopy. Finally some general conclusions are drawn regarding what has been learnt in recent years from information gained by both techniques. |
Persistent Identifier | http://hdl.handle.net/10722/119789 |
ISSN | 2023 SCImago Journal Rankings: 0.161 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Ling, CC | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.contributor.author | Gong, M | en_HK |
dc.contributor.author | Chen, XD | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.date.accessioned | 2010-09-26T09:09:21Z | - |
dc.date.available | 2010-09-26T09:09:21Z | - |
dc.date.issued | 2000 | en_HK |
dc.identifier.citation | Diffusion And Defect Data. Pt A Defect And Diffusion Forum, 2000, v. 183, p. 1-24 | en_HK |
dc.identifier.issn | 1012-0386 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/119789 | - |
dc.description.abstract | Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy are two major techniques currently used in studying point defects in 6H-SiC. These techniques are briefly described. A review of studies on asgrown, electron-irradiated and ion-implanted 6H-SiC is made. Studies employing Deep Level Transient Spectroscopy are considered first followed by those employing Positron Annihilation Spectroscopy. Finally some general conclusions are drawn regarding what has been learnt in recent years from information gained by both techniques. | en_HK |
dc.language | eng | en_HK |
dc.publisher | Trans Tech Publications. The Journal's web site is located at http://www.ttp.net/1012-0386.html | en_HK |
dc.relation.ispartof | Diffusion and Defect Data. Pt A Defect and Diffusion Forum | en_HK |
dc.title | Recent advances in defect characterization in 6H-SiC using Deep Level Transient Spectroscopy and Positron Annihilation Spectroscopy | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Ling, CC: ccling@hkucc.hku.hk | en_HK |
dc.identifier.email | Beling, CD: cdbeling@hkucc.hku.hk | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.authority | Ling, CC=rp00747 | en_HK |
dc.identifier.authority | Beling, CD=rp00660 | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.scopus | eid_2-s2.0-0033697982 | en_HK |
dc.identifier.hkuros | 55022 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0033697982&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 183 | en_HK |
dc.identifier.spage | 1 | en_HK |
dc.identifier.epage | 24 | en_HK |
dc.identifier.isi | WOS:000089882500001 | - |
dc.publisher.place | Switzerland | en_HK |
dc.identifier.scopusauthorid | Ling, CC=13310239300 | en_HK |
dc.identifier.scopusauthorid | Beling, CD=7005864180 | en_HK |
dc.identifier.scopusauthorid | Gong, M=9273057400 | en_HK |
dc.identifier.scopusauthorid | Chen, XD=26642908200 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.issnl | 1012-0386 | - |