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Article: Surface modification for epitaxial growth of single crystalline cobalt thin films with uniaxial magnetic anisotropy on GaN(0001)-1 × 1 surfaces

TitleSurface modification for epitaxial growth of single crystalline cobalt thin films with uniaxial magnetic anisotropy on GaN(0001)-1 × 1 surfaces
Authors
Li, HDHe, KXie, MHWang, NJia, JFXue, QK
KeywordsPhysics
Issue Date2010
PublisherInstitute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/NJP
Citation
New Journal Of Physics, 2010, v. 12 How to Cite?
DOI: http://dx.doi.org/10.1088/1367-2630/12/7/073007
AbstractEpitaxial growth and magnetic properties of Co thin films on GaN(0001)-1 × 1 surfaces are studied. The films show degraded saturation magnetization due to the interfacial interaction. On excess-Ga-induced pseudo1 ×1 surface, 30°-rotation domains in the Co epilayer are inevitable and the films show in-plane magnetic anisotropy. By annealing the starting surface of pseudo-1 × 1 and to achieve a Ga-less 1 ×1 surface, single domain Co epifilms having orientations aligned with the substrate can be grown, which facilitates in-plane uniaxial magnetic anisotropy. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.
Persistent Identifierhttp://hdl.handle.net/10722/123983
ISSN
1367-2630
2021 Impact Factor: 3.716
2020 SCImago Journal Rankings: 1.584
ISI Accession Number ID
WOS:000279880300003
Funding AgencyGrant Number
NSFC/RGC, Natural Science Foundation of China
Hong Kong Special Administrative Region, ChinaN_ HKU705/07
Funding Information:

We acknowledge technical support from Mr W K Ho. This work was financially supported by the NSFC/RGC Joint Research Scheme of the Natural Science Foundation of China and Hong Kong Special Administrative Region, China, under grant no. N_ HKU705/07.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLi, HDen_HK
dc.contributor.authorHe, Ken_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorWang, Nen_HK
dc.contributor.authorJia, JFen_HK
dc.contributor.authorXue, QKen_HK
dc.date.accessioned2010-10-15T04:18:37Z-
dc.date.available2010-10-15T04:18:37Z-
dc.date.issued2010en_HK
dc.identifier.citationNew Journal Of Physics, 2010, v. 12en_HK
dc.identifier.issn1367-2630en_HK
dc.identifier.urihttp://hdl.handle.net/10722/123983-
dc.description.abstractEpitaxial growth and magnetic properties of Co thin films on GaN(0001)-1 × 1 surfaces are studied. The films show degraded saturation magnetization due to the interfacial interaction. On excess-Ga-induced pseudo1 ×1 surface, 30°-rotation domains in the Co epilayer are inevitable and the films show in-plane magnetic anisotropy. By annealing the starting surface of pseudo-1 × 1 and to achieve a Ga-less 1 ×1 surface, single domain Co epifilms having orientations aligned with the substrate can be grown, which facilitates in-plane uniaxial magnetic anisotropy. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.en_HK
dc.languageeng-
dc.publisherInstitute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/NJPen_HK
dc.relation.ispartofNew Journal of Physicsen_HK
dc.subjectPhysics-
dc.titleSurface modification for epitaxial growth of single crystalline cobalt thin films with uniaxial magnetic anisotropy on GaN(0001)-1 × 1 surfacesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1367-2630&volume=12 article no. 073007&spage=&epage=&date=2010&atitle=Surface+modification+for+epitaxial+growth+of+single+crystalline+cobalt+thin+films+with+uniaxial+magnetic+anisotropy+on+GaN(0001)-1×1+surfaces-
dc.identifier.emailLi, HD: hdli1978@hkucc.hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityLi, HD=rp00739en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturelink_to_OA_fulltext-
dc.identifier.doi10.1088/1367-2630/12/7/073007en_HK
dc.identifier.scopuseid_2-s2.0-77955340190en_HK
dc.identifier.hkuros172481-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77955340190&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume12en_HK
dc.identifier.isiWOS:000279880300003-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLi, HD=36441549600en_HK
dc.identifier.scopusauthoridHe, K=8726956700en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridWang, N=7404340430en_HK
dc.identifier.scopusauthoridJia, JF=25930429900en_HK
dc.identifier.scopusauthoridXue, QK=7201986973en_HK
dc.identifier.issnl1367-2630-

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