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Article: Electric-field modulation of the number of helical edge states in thin-film semiconductors

TitleElectric-field modulation of the number of helical edge states in thin-film semiconductors
Authors
Jiang, ZFChu, RLShen, SQ
KeywordsPhysics
Issue Date2010
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter and Materials Physics), 2010, v. 81 n. 11, article no. 115322 How to Cite?
DOI: http://dx.doi.org/10.1103/PhysRevB.81.115322
AbstractWe propose a method that can be used to modulate the topological orders or the number of helical edge states in ultrathin-film semiconductors without a magnetic field. By applying a staggered periodic potential, the system undergoes a transition from a topological trivial insulating state into a nontrivial one with helical edge states emerging in the band gap. Further study demonstrates that the number of helical edge states can be modulated by the amplitude and the geometry of the electric potential in a stepwise fashion, which is analogous to tuning the integer quantum Hall conductance by a magnetic field. We address the feasibility of experimental measurement of this topological transition. © 2010 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/125266
ISSN
1098-0121
2014 Impact Factor: 3.736
ISI Accession Number ID
WOS:000276248800099
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU 7041/07P
HKU 10/CRF/08
Funding Information:

This work was supported by the Research Grant Council of Hong Kong under Grants No. HKU 7041/07P and No. HKU 10/CRF/08.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorJiang, ZFen_HK
dc.contributor.authorChu, RLen_HK
dc.contributor.authorShen, SQen_HK
dc.date.accessioned2010-10-31T11:20:59Z-
dc.date.available2010-10-31T11:20:59Z-
dc.date.issued2010en_HK
dc.identifier.citationPhysical Review B (Condensed Matter and Materials Physics), 2010, v. 81 n. 11, article no. 115322-
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/125266-
dc.description.abstractWe propose a method that can be used to modulate the topological orders or the number of helical edge states in ultrathin-film semiconductors without a magnetic field. By applying a staggered periodic potential, the system undergoes a transition from a topological trivial insulating state into a nontrivial one with helical edge states emerging in the band gap. Further study demonstrates that the number of helical edge states can be modulated by the amplitude and the geometry of the electric potential in a stepwise fashion, which is analogous to tuning the integer quantum Hall conductance by a magnetic field. We address the feasibility of experimental measurement of this topological transition. © 2010 The American Physical Society.en_HK
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B (Condensed Matter and Materials Physics)-
dc.rightsCopyright 2010 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.81.115322-
dc.subjectPhysics-
dc.titleElectric-field modulation of the number of helical edge states in thin-film semiconductorsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=81&issue=11 article no. 115322&spage=&epage=&date=2010&atitle=Electric+field+modulation+of+number+of+helical+edge+states+in+ultrathin+film+semiconductors-
dc.identifier.emailShen, SQ: sshen@hkucc.hku.hken_HK
dc.identifier.authorityShen, SQ=rp00775en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1103/PhysRevB.81.115322en_HK
dc.identifier.scopuseid_2-s2.0-77954987301en_HK
dc.identifier.hkuros174866en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77954987301&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume81en_HK
dc.identifier.issue11en_HK
dc.identifier.spagearticle no. 115322-
dc.identifier.epagearticle no. 115322-
dc.identifier.isiWOS:000276248800099-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridJiang, ZF=24171139900en_HK
dc.identifier.scopusauthoridChu, RL=25925722300en_HK
dc.identifier.scopusauthoridShen, SQ=7403431266en_HK
dc.identifier.issnl1098-0121-

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