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Conference Paper: Deep level defects in electron irradiated ZnO single crystal studied by deep level transient spectroscopy
| Title | Deep level defects in electron irradiated ZnO single crystal studied by deep level transient spectroscopy |
|---|---|
| Authors | |
| Issue Date | 2010 |
| Publisher | European Materials Research Society. |
| Citation | The 2010 Fall Meeting of the European Materials Research Society (E-MRS), Warsaw, Poland, 13-17 September 2010. How to Cite? |
| Abstract | Undoped melt grown n-type ZnO single crystal (n1016cm-3) was irradiated by
1.7-MeV electrons with fluence of 1014 cm-2 followed by post-irradiation annealing. Au Schottky
contacts were thermally evaporated onto the samples with hydrogen peroxide pre-treatment.
Deep level transient spectroscopy measurement was used to investigate the deep traps induced
by the electron irradiation. The dominant trap in the as-grown ZnO single crystal has the
activation energy of 0.28eV. The electron irradiation introduced an extra trap having the
activation energy of 0.16eV. Thermal annealing study was also performed to study the thermal
evolution of these deep level defects. |
| Description | Session B: Semiconducting oxides |
| Persistent Identifier | http://hdl.handle.net/10722/127150 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lu, XH | en_HK |
| dc.contributor.author | Ling, CC | en_HK |
| dc.contributor.author | Zhong, ZQ | en_HK |
| dc.date.accessioned | 2010-10-31T13:09:00Z | - |
| dc.date.available | 2010-10-31T13:09:00Z | - |
| dc.date.issued | 2010 | en_HK |
| dc.identifier.citation | The 2010 Fall Meeting of the European Materials Research Society (E-MRS), Warsaw, Poland, 13-17 September 2010. | en_HK |
| dc.identifier.uri | http://hdl.handle.net/10722/127150 | - |
| dc.description | Session B: Semiconducting oxides | - |
| dc.description.abstract | Undoped melt grown n-type ZnO single crystal (n1016cm-3) was irradiated by 1.7-MeV electrons with fluence of 1014 cm-2 followed by post-irradiation annealing. Au Schottky contacts were thermally evaporated onto the samples with hydrogen peroxide pre-treatment. Deep level transient spectroscopy measurement was used to investigate the deep traps induced by the electron irradiation. The dominant trap in the as-grown ZnO single crystal has the activation energy of 0.28eV. The electron irradiation introduced an extra trap having the activation energy of 0.16eV. Thermal annealing study was also performed to study the thermal evolution of these deep level defects. | - |
| dc.language | eng | en_HK |
| dc.publisher | European Materials Research Society. | - |
| dc.relation.ispartof | Meeting of the European Materials Research Society | - |
| dc.title | Deep level defects in electron irradiated ZnO single crystal studied by deep level transient spectroscopy | en_HK |
| dc.type | Conference_Paper | en_HK |
| dc.identifier.email | Lu, XH: xhlu@njut.edu.cn | en_HK |
| dc.identifier.email | Ling, CC: ccling@hkucc.hku.hk | en_HK |
| dc.identifier.hkuros | 183030 | en_HK |
| dc.description.other | The 2010 Fall Meeting of the European Materials Research Society (E-MRS), Warsaw, Poland, 13-17 September 2010. | - |