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Article: Enhancement of spontaneous emission rate and reduction in amplified spontaneous emission threshold in electrodeposited three-dimensional ZnO photonic crystal

TitleEnhancement of spontaneous emission rate and reduction in amplified spontaneous emission threshold in electrodeposited three-dimensional ZnO photonic crystal
Authors
Zhong, YYue, ZWong, GKLXi, YYHsu, YFDjurišić, ABDong, JWChen, WJWong, KS
KeywordsElectrodeposition
Excitons
II-VI semiconductors
Photoluminescence
Photonic band gap
Issue Date2010
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2010, v. 97 n. 19, article no. 191102 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3499274
AbstractZnO photonic crystal (PC) with face-center-cube type structure is fabricated by electrodeposition using holographic lithographically made organic (SU-8) template. Photonic band gap effect (reflection peak and transmission dip in infrared spectral region) is clearly seen. Observation of strong enhancement and blueshift of the emission peak (from 383.8 to 378.8 nm), shortening of the exciton photoluminescence lifetime (from 88 to 34 ps), and reduction in amplified spontaneous emission threshold of ZnO PC compared to that of the reference nonstructured electrodeposited ZnO showed clear evidence of PC structure affecting the ZnO exciton emission. © 2010 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/129351
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000284169900002
Funding AgencyGrant Number
Research Grants Council of Hong Kong603908
University of Hong Kong
Fundamental Research Funds for the Central Universities21609604
Funding Information:

This work is partially supported by the Research Grants Council of Hong Kong (Project No. 603908) and the University Development Fund and the Small Project Grant of the University of Hong Kong and the Fundamental Research Funds for the Central Universities (Grand No. 21609604).

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZhong, Yen_HK
dc.contributor.authorYue, Zen_HK
dc.contributor.authorWong, GKLen_HK
dc.contributor.authorXi, YYen_HK
dc.contributor.authorHsu, YFen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorDong, JWen_HK
dc.contributor.authorChen, WJen_HK
dc.contributor.authorWong, KSen_HK
dc.date.accessioned2010-12-23T08:35:45Z-
dc.date.available2010-12-23T08:35:45Z-
dc.date.issued2010en_HK
dc.identifier.citationApplied Physics Letters, 2010, v. 97 n. 19, article no. 191102-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/129351-
dc.description.abstractZnO photonic crystal (PC) with face-center-cube type structure is fabricated by electrodeposition using holographic lithographically made organic (SU-8) template. Photonic band gap effect (reflection peak and transmission dip in infrared spectral region) is clearly seen. Observation of strong enhancement and blueshift of the emission peak (from 383.8 to 378.8 nm), shortening of the exciton photoluminescence lifetime (from 88 to 34 ps), and reduction in amplified spontaneous emission threshold of ZnO PC compared to that of the reference nonstructured electrodeposited ZnO showed clear evidence of PC structure affecting the ZnO exciton emission. © 2010 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2010, v. 97 n. 19, article no. 191102 and may be found at https://doi.org/10.1063/1.3499274-
dc.subjectElectrodeposition-
dc.subjectExcitons-
dc.subjectII-VI semiconductors-
dc.subjectPhotoluminescence-
dc.subjectPhotonic band gap-
dc.titleEnhancement of spontaneous emission rate and reduction in amplified spontaneous emission threshold in electrodeposited three-dimensional ZnO photonic crystalen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=97, article no. 191102&spage=&epage=&date=2010&atitle=Enhancement+of+spontaneous+emission+rate+and+reduction+in+amplified+spontaneous+emission+threshold+in+electrodeposited+three-dimensional+ZnO+photonic+crystal-
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1063/1.3499274en_HK
dc.identifier.scopuseid_2-s2.0-78249288165en_HK
dc.identifier.hkuros183422en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-78249288165&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume97en_HK
dc.identifier.issue19en_HK
dc.identifier.spagearticle no. 191102-
dc.identifier.epagearticle no. 191102-
dc.identifier.isiWOS:000284169900002-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZhong, Y=8623189300en_HK
dc.identifier.scopusauthoridYue, Z=36653379100en_HK
dc.identifier.scopusauthoridWong, GKL=7402527572en_HK
dc.identifier.scopusauthoridXi, YY=23053521800en_HK
dc.identifier.scopusauthoridHsu, YF=16063930300en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridDong, JW=8938503300en_HK
dc.identifier.scopusauthoridChen, WJ=15753546700en_HK
dc.identifier.scopusauthoridWong, KS=13310164400en_HK
dc.identifier.issnl0003-6951-

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