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Article: Effect of O2 adsorption on electron scattering at Cu(001) surfaces

TitleEffect of O2 adsorption on electron scattering at Cu(001) surfaces
Authors
Chawla, JSZahid, FGuo, HGall, D
KeywordsAdsorption
Electron Energy Loss Spectroscopy
Monolayers
Issue Date2010
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2010, v. 97 n. 13, article no. 132106 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3489357
AbstractThe electrical resistance of epitaxial Cu(001) sequentially increases, decreases, and again increases when exposed to 10-3 - 105 Pa s of O2. This is attributed to partial specular surface scattering for smooth clean Cu(001) and for the surface with a complete adsorbed monolayer, but diffuse scattering at partial coverage and after chemical oxidation. A model relates the surface coverage to the specularity parameter and finds adatom and advacancy scattering cross-sections of 0.8±0.2 and 0.06±0.03 nm2, which are qualitatively validated by nonequilibrium ab initio transport simulations. The rates for resistance change are proportional to the O2 partial pressure. © 2010 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/132520
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000282443800038
Funding AgencyGrant Number
NYSTAR Interconnect Focus Center at Rensselaer
Funding Information:

This research is supported by the NYSTAR Interconnect Focus Center at Rensselaer.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChawla, JSen_HK
dc.contributor.authorZahid, Fen_HK
dc.contributor.authorGuo, Hen_HK
dc.contributor.authorGall, Den_HK
dc.date.accessioned2011-03-28T09:25:47Z-
dc.date.available2011-03-28T09:25:47Z-
dc.date.issued2010en_HK
dc.identifier.citationApplied Physics Letters, 2010, v. 97 n. 13, article no. 132106-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/132520-
dc.description.abstractThe electrical resistance of epitaxial Cu(001) sequentially increases, decreases, and again increases when exposed to 10-3 - 105 Pa s of O2. This is attributed to partial specular surface scattering for smooth clean Cu(001) and for the surface with a complete adsorbed monolayer, but diffuse scattering at partial coverage and after chemical oxidation. A model relates the surface coverage to the specularity parameter and finds adatom and advacancy scattering cross-sections of 0.8±0.2 and 0.06±0.03 nm2, which are qualitatively validated by nonequilibrium ab initio transport simulations. The rates for resistance change are proportional to the O2 partial pressure. © 2010 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.subjectAdsorptionen_US
dc.subjectElectron Energy Loss Spectroscopyen_US
dc.subjectMonolayersen_US
dc.titleEffect of O2 adsorption on electron scattering at Cu(001) surfacesen_HK
dc.typeArticleen_HK
dc.identifier.emailZahid, F: fzahid@hku.hken_HK
dc.identifier.authorityZahid, F=rp01472en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.3489357en_HK
dc.identifier.scopuseid_2-s2.0-77957666968en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77957666968&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume97en_HK
dc.identifier.issue13en_HK
dc.identifier.spagearticle no. 132106-
dc.identifier.epagearticle no. 132106-
dc.identifier.isiWOS:000282443800038-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChawla, JS=18036762900en_HK
dc.identifier.scopusauthoridZahid, F=8568996000en_HK
dc.identifier.scopusauthoridGuo, H=16236337600en_HK
dc.identifier.scopusauthoridGall, D=7102060628en_HK
dc.identifier.issnl0003-6951-

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