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Article: Effect of O2 adsorption on electron scattering at Cu(001) surfaces
Title | Effect of O2 adsorption on electron scattering at Cu(001) surfaces | ||||
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Authors | |||||
Keywords | Adsorption Electron Energy Loss Spectroscopy Monolayers | ||||
Issue Date | 2010 | ||||
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | ||||
Citation | Applied Physics Letters, 2010, v. 97 n. 13, article no. 132106 How to Cite? | ||||
Abstract | The electrical resistance of epitaxial Cu(001) sequentially increases, decreases, and again increases when exposed to 10-3 - 105 Pa s of O2. This is attributed to partial specular surface scattering for smooth clean Cu(001) and for the surface with a complete adsorbed monolayer, but diffuse scattering at partial coverage and after chemical oxidation. A model relates the surface coverage to the specularity parameter and finds adatom and advacancy scattering cross-sections of 0.8±0.2 and 0.06±0.03 nm2, which are qualitatively validated by nonequilibrium ab initio transport simulations. The rates for resistance change are proportional to the O2 partial pressure. © 2010 American Institute of Physics. | ||||
Persistent Identifier | http://hdl.handle.net/10722/132520 | ||||
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 | ||||
ISI Accession Number ID |
Funding Information: This research is supported by the NYSTAR Interconnect Focus Center at Rensselaer. | ||||
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chawla, JS | en_HK |
dc.contributor.author | Zahid, F | en_HK |
dc.contributor.author | Guo, H | en_HK |
dc.contributor.author | Gall, D | en_HK |
dc.date.accessioned | 2011-03-28T09:25:47Z | - |
dc.date.available | 2011-03-28T09:25:47Z | - |
dc.date.issued | 2010 | en_HK |
dc.identifier.citation | Applied Physics Letters, 2010, v. 97 n. 13, article no. 132106 | - |
dc.identifier.issn | 0003-6951 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/132520 | - |
dc.description.abstract | The electrical resistance of epitaxial Cu(001) sequentially increases, decreases, and again increases when exposed to 10-3 - 105 Pa s of O2. This is attributed to partial specular surface scattering for smooth clean Cu(001) and for the surface with a complete adsorbed monolayer, but diffuse scattering at partial coverage and after chemical oxidation. A model relates the surface coverage to the specularity parameter and finds adatom and advacancy scattering cross-sections of 0.8±0.2 and 0.06±0.03 nm2, which are qualitatively validated by nonequilibrium ab initio transport simulations. The rates for resistance change are proportional to the O2 partial pressure. © 2010 American Institute of Physics. | en_HK |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_HK |
dc.relation.ispartof | Applied Physics Letters | en_HK |
dc.subject | Adsorption | en_US |
dc.subject | Electron Energy Loss Spectroscopy | en_US |
dc.subject | Monolayers | en_US |
dc.title | Effect of O2 adsorption on electron scattering at Cu(001) surfaces | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Zahid, F: fzahid@hku.hk | en_HK |
dc.identifier.authority | Zahid, F=rp01472 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1063/1.3489357 | en_HK |
dc.identifier.scopus | eid_2-s2.0-77957666968 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-77957666968&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 97 | en_HK |
dc.identifier.issue | 13 | en_HK |
dc.identifier.spage | article no. 132106 | - |
dc.identifier.epage | article no. 132106 | - |
dc.identifier.isi | WOS:000282443800038 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Chawla, JS=18036762900 | en_HK |
dc.identifier.scopusauthorid | Zahid, F=8568996000 | en_HK |
dc.identifier.scopusauthorid | Guo, H=16236337600 | en_HK |
dc.identifier.scopusauthorid | Gall, D=7102060628 | en_HK |
dc.identifier.issnl | 0003-6951 | - |