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Article: Two-terminal write-once-read-many-times memory device based on charging-controlled current modulation in Al/Al-Rich Al2O3/p-Si diode

TitleTwo-terminal write-once-read-many-times memory device based on charging-controlled current modulation in Al/Al-Rich Al2O3/p-Si diode
Authors
Zhu, WChen, TPLiu, YYang, MFung, S
KeywordsAluminum oxide
charging effect
current transport
metal nanoparticles
metal-insulator-semiconductor (MIS) diode
nanocrystals
non-volatile memory
WORM device
Issue Date2011
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 2011, v. 58 n. 4, p. 960-965 How to Cite?
DOI: http://dx.doi.org/10.1109/TED.2011.2105493
AbstractA write-once-read-many-times (WORM) memory device was realized based on the charging-controlled modulation in the current conduction of Al/Al-rich Al 2O 3/p-type Si diode. A large increase in the reverse current of the diode could be achieved with a negative charging voltage, e.g., charging at -25 V for 1 ms results in a current increase by about four orders. Memory states of the WORM device could be altered by changing the current conduction with charge trapping in the Al-rich Al 2O 3 layer. The memory exhibited good reading endurance and retention characteristics. © 2011 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/133647
ISSN
0018-9383
2021 Impact Factor: 3.221
2020 SCImago Journal Rankings: 0.828
ISI Accession Number ID
WOS:000288676200007
Funding AgencyGrant Number
National Research Foundation of SingaporeNRF-G-CRP 2007-01
National Natural Science Foundation of China60806040
2008ZC80
Funding Information:

This work was supported by the National Research Foundation of Singapore under Grant NRF-G-CRP 2007-01. The work of Y. Liu was supported by the National Natural Science Foundation of China under Project 60806040 and Project 2008ZC80. The review of this paper was arranged by Editor S. Deleonibus.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZhu, Wen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorYang, Men_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2011-05-24T02:13:15Z-
dc.date.available2011-05-24T02:13:15Z-
dc.date.issued2011en_HK
dc.identifier.citationIeee Transactions On Electron Devices, 2011, v. 58 n. 4, p. 960-965en_HK
dc.identifier.issn0018-9383en_HK
dc.identifier.urihttp://hdl.handle.net/10722/133647-
dc.description.abstractA write-once-read-many-times (WORM) memory device was realized based on the charging-controlled modulation in the current conduction of Al/Al-rich Al 2O 3/p-type Si diode. A large increase in the reverse current of the diode could be achieved with a negative charging voltage, e.g., charging at -25 V for 1 ms results in a current increase by about four orders. Memory states of the WORM device could be altered by changing the current conduction with charge trapping in the Al-rich Al 2O 3 layer. The memory exhibited good reading endurance and retention characteristics. © 2011 IEEE.en_HK
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_HK
dc.relation.ispartofIEEE Transactions on Electron Devicesen_HK
dc.subjectAluminum oxideen_HK
dc.subjectcharging effecten_HK
dc.subjectcurrent transporten_HK
dc.subjectmetal nanoparticlesen_HK
dc.subjectmetal-insulator-semiconductor (MIS) diodeen_HK
dc.subjectnanocrystalsen_HK
dc.subjectnon-volatile memoryen_HK
dc.subjectWORM deviceen_HK
dc.titleTwo-terminal write-once-read-many-times memory device based on charging-controlled current modulation in Al/Al-Rich Al2O3/p-Si diodeen_HK
dc.typeArticleen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TED.2011.2105493en_HK
dc.identifier.scopuseid_2-s2.0-79953087592en_HK
dc.identifier.hkuros185384en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79953087592&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume58en_HK
dc.identifier.issue4en_HK
dc.identifier.spage960en_HK
dc.identifier.epage965en_HK
dc.identifier.isiWOS:000288676200007-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZhu, W=7404232937en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridLiu, Y=36066740000en_HK
dc.identifier.scopusauthoridYang, M=24464683100en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.issnl0018-9383-

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