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- Publisher Website: 10.1063/1.3475566
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- PMID: 20866120
- WOS: WOS:000282047500005
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Article: Time-dependent density functional theory for quantum transport
Title | Time-dependent density functional theory for quantum transport | ||||||||
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Authors | |||||||||
Keywords | Approximation scheme Computational costs Electronic device Electronic systems External voltages | ||||||||
Issue Date | 2010 | ||||||||
Publisher | American Institute of Physics. The Journal's web site is located at http://jcp.aip.org/jcp/staff.jsp | ||||||||
Citation | Journal of Chemical Physics, 2010, v. 133 n. 11, article no. 114101 How to Cite? | ||||||||
Abstract | Based on our earlier works [X. Zheng, Phys. Rev. B 75, 195127 (2007); J. S. Jin, J. Chem. Phys. 128, 234703 (2008)], we propose a rigorous and numerically convenient approach to simulate time-dependent quantum transport from first-principles. The proposed approach combines time-dependent density functional theory with quantum dissipation theory, and results in a useful tool for studying transient dynamics of electronic systems. Within the proposed exact theoretical framework, we construct a number of practical schemes for simulating realistic systems such as nanoscopic electronic devices. Computational cost of each scheme is analyzed, with the expected level of accuracy discussed. As a demonstration, a simulation based on the adiabatic wide-band limit approximation scheme is carried out to characterize the transient current response of a carbon nanotube based electronic device under time-dependent external voltages. © 2010 American Institute of Physics. | ||||||||
Persistent Identifier | http://hdl.handle.net/10722/135028 | ||||||||
ISSN | 2023 Impact Factor: 3.1 2023 SCImago Journal Rankings: 1.101 | ||||||||
ISI Accession Number ID |
Funding Information: Support from the Hong Kong Research Grant Council (Contract Nos. HKU7009/09P, 7008/08P, 7011/06P, 7013/07P, 604709, and HKUST 9/CRF/08), the University Grant Council (Contract No. AoE/P-04/08) and National Science Foundation of China (Contract No. NSFC 20828003) is gratefully acknowledged. | ||||||||
References | |||||||||
Grants |
DC Field | Value | Language |
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dc.contributor.author | Zheng, X | en_HK |
dc.contributor.author | Chen, G | en_HK |
dc.contributor.author | Mo, Y | en_HK |
dc.contributor.author | Koo, S | en_HK |
dc.contributor.author | Tian, H | en_HK |
dc.contributor.author | Yam, C | en_HK |
dc.contributor.author | Yan, Y | en_HK |
dc.date.accessioned | 2011-07-27T01:26:15Z | - |
dc.date.available | 2011-07-27T01:26:15Z | - |
dc.date.issued | 2010 | en_HK |
dc.identifier.citation | Journal of Chemical Physics, 2010, v. 133 n. 11, article no. 114101 | - |
dc.identifier.issn | 0021-9606 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/135028 | - |
dc.description.abstract | Based on our earlier works [X. Zheng, Phys. Rev. B 75, 195127 (2007); J. S. Jin, J. Chem. Phys. 128, 234703 (2008)], we propose a rigorous and numerically convenient approach to simulate time-dependent quantum transport from first-principles. The proposed approach combines time-dependent density functional theory with quantum dissipation theory, and results in a useful tool for studying transient dynamics of electronic systems. Within the proposed exact theoretical framework, we construct a number of practical schemes for simulating realistic systems such as nanoscopic electronic devices. Computational cost of each scheme is analyzed, with the expected level of accuracy discussed. As a demonstration, a simulation based on the adiabatic wide-band limit approximation scheme is carried out to characterize the transient current response of a carbon nanotube based electronic device under time-dependent external voltages. © 2010 American Institute of Physics. | en_HK |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jcp.aip.org/jcp/staff.jsp | en_HK |
dc.relation.ispartof | Journal of Chemical Physics | en_HK |
dc.subject | Approximation scheme | - |
dc.subject | Computational costs | - |
dc.subject | Electronic device | - |
dc.subject | Electronic systems | - |
dc.subject | External voltages | - |
dc.title | Time-dependent density functional theory for quantum transport | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-9606&volume=133&issue=11, article no. 114101&spage=&epage=&date=2010&atitle=Time-dependent+Density+Functional+Theory+for+Quantum+Transport | - |
dc.identifier.email | Chen, G:ghc@yangtze.hku.hk | en_HK |
dc.identifier.email | Yam, C:yamcy@graduate.hku.hk | en_HK |
dc.identifier.authority | Chen, G=rp00671 | en_HK |
dc.identifier.authority | Yam, C=rp01399 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1063/1.3475566 | en_HK |
dc.identifier.pmid | 20866120 | - |
dc.identifier.scopus | eid_2-s2.0-77956976663 | en_HK |
dc.identifier.hkuros | 186322 | en_US |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-77956976663&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 133 | en_HK |
dc.identifier.issue | 11 | en_HK |
dc.identifier.spage | article no. 114101 | - |
dc.identifier.epage | article no. 114101 | - |
dc.identifier.eissn | 1089-7690 | - |
dc.identifier.isi | WOS:000282047500005 | - |
dc.publisher.place | United States | en_HK |
dc.relation.project | Theory, Modeling, and Simulation of Emerging Electronics | - |
dc.identifier.scopusauthorid | Zheng, X=7404090981 | en_HK |
dc.identifier.scopusauthorid | Chen, G=35253368600 | en_HK |
dc.identifier.scopusauthorid | Mo, Y=35253750800 | en_HK |
dc.identifier.scopusauthorid | Koo, S=36544127200 | en_HK |
dc.identifier.scopusauthorid | Tian, H=36544298700 | en_HK |
dc.identifier.scopusauthorid | Yam, C=7004032400 | en_HK |
dc.identifier.scopusauthorid | Yan, Y=7404586425 | en_HK |
dc.identifier.citeulike | 11617022 | - |
dc.identifier.issnl | 0021-9606 | - |