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Article: Effects of film thickness and mismatch strains on magnetoelectric coupling in vertical heteroepitaxial nanocomposite thin films

TitleEffects of film thickness and mismatch strains on magnetoelectric coupling in vertical heteroepitaxial nanocomposite thin films
Authors
KeywordsElectric polarization
Epitaxial strain
Ferromagnetic phasis
Heteroepitaxial
Magnetoelectric couplings
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2011, v. 109 n. 9, article no. 094102 How to Cite?
AbstractThe phase field model is adopted to study the magnetoelectric coupling effects in vertical heteroepitaxial nanocomposite thin films. Both the lateral epitaxial strains between the film and the substrate and the vertical epitaxial strains between the ferroelectric and ferromagnetic phases are accounted for in the model devised. The effects of the film thickness on the magnetic-field- induced electric polarization (MIEP) are investigated. The results obtained show that the MIEP is strongly dependent on the film thickness, as well as on the vertical and lateral epitaxial strains. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/137351
ISSN
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
Funding AgencyGrant Number
Research Grants Council of the Hong Kong Special Administrative Region, ChinaHKU716508E
HKU716007E
Funding Information:

Support from the Research Grants Council of the Hong Kong Special Administrative Region, China (Project Nos. HKU716508E and HKU716007E) is acknowledged.

References

 

DC FieldValueLanguage
dc.contributor.authorChen, HTen_HK
dc.contributor.authorHong, Len_HK
dc.contributor.authorSoh, AKen_HK
dc.date.accessioned2011-08-26T14:23:36Z-
dc.date.available2011-08-26T14:23:36Z-
dc.date.issued2011en_HK
dc.identifier.citationJournal of Applied Physics, 2011, v. 109 n. 9, article no. 094102-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/137351-
dc.description.abstractThe phase field model is adopted to study the magnetoelectric coupling effects in vertical heteroepitaxial nanocomposite thin films. Both the lateral epitaxial strains between the film and the substrate and the vertical epitaxial strains between the ferroelectric and ferromagnetic phases are accounted for in the model devised. The effects of the film thickness on the magnetic-field- induced electric polarization (MIEP) are investigated. The results obtained show that the MIEP is strongly dependent on the film thickness, as well as on the vertical and lateral epitaxial strains. © 2011 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2011, v. 109 n. 9, article no. 094102 and may be found at https://doi.org/10.1063/1.3583599-
dc.subjectElectric polarization-
dc.subjectEpitaxial strain-
dc.subjectFerromagnetic phasis-
dc.subjectHeteroepitaxial-
dc.subjectMagnetoelectric couplings-
dc.titleEffects of film thickness and mismatch strains on magnetoelectric coupling in vertical heteroepitaxial nanocomposite thin filmsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=109&issue=9, article no. 094102&spage=&epage=&date=2011&atitle=Effects+of+film+thickness+and+mismatch+strains+on+magnetoelectric+coupling+in+vertical+heteroepitaxial+nanocomposite+thin+films-
dc.identifier.emailSoh, AK:aksoh@hkucc.hku.hken_HK
dc.identifier.authoritySoh, AK=rp00170en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3583599en_HK
dc.identifier.scopuseid_2-s2.0-79959505531en_HK
dc.identifier.hkuros191564en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79959505531&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume109en_HK
dc.identifier.issue9en_HK
dc.identifier.spagearticle no. 094102-
dc.identifier.epagearticle no. 094102-
dc.identifier.isiWOS:000290588500091-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, HT=42561082500en_HK
dc.identifier.scopusauthoridHong, L=23985073500en_HK
dc.identifier.scopusauthoridSoh, AK=7006795203en_HK
dc.identifier.issnl0021-8979-

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