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Article: Ultrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disks

TitleUltrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disks
Authors
Ning, JQXu, SJWei, ZFRuan, XZJi, YZheng, HZLiu, HC
KeywordsElectron spin
InAs/GaAs
Optical Kerr effect
Quantum disks
Issue Date2010
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physleta
Citation
Physics Letters, Section A: General, Atomic And Solid State Physics, 2010, v. 374 n. 47, p. 4793-4796 How to Cite?
DOI: http://dx.doi.org/10.1016/j.physleta.2010.09.073
AbstractTime-resolved Kerr rotation (TRKR) measurements based on pump-probe arrangement were carried out at 5 K on the monolayer fluctuation induced InAs/GaAs quantum disks grown on GaAs substrate without external magnetic field. The lineshape of TRKR signals shows an unusual dependence on the excitation wavelength, especially antisymmetric step-shaped structures appearing when the excitation wavelength was resonantly scanned over the heavy- and light-hole subbands. Moreover, these step structures possess an almost identical decay time of ∼40 ps which is believed to be the characteristic spin dephasing time of electrons in the extremely narrow InAs/GaAs quantum disks. © 2010 Elsevier B.V.
Persistent Identifierhttp://hdl.handle.net/10722/137493
ISSN
0375-9601
2023 Impact Factor: 2.3
2023 SCImago Journal Rankings: 0.483
ISI Accession Number ID
WOS:000284247900013
Funding AgencyGrant Number
Hong Kong RGC-GRF in Hong KongHKU 7049/08P
NSFC in Beijing10425419
Funding Information:

The work was supported by Hong Kong RGC-GRF Grants (No. HKU 7049/08P) in Hong Kong and by NSFC Grant (No. 10425419) in Beijing. One of the authors, SJX, would like to thank W.D. Sheng, W. Yao, and F.C. Zhang for their discussions.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorNing, JQen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorWei, ZFen_HK
dc.contributor.authorRuan, XZen_HK
dc.contributor.authorJi, Yen_HK
dc.contributor.authorZheng, HZen_HK
dc.contributor.authorLiu, HCen_HK
dc.date.accessioned2011-08-26T14:26:16Z-
dc.date.available2011-08-26T14:26:16Z-
dc.date.issued2010en_HK
dc.identifier.citationPhysics Letters, Section A: General, Atomic And Solid State Physics, 2010, v. 374 n. 47, p. 4793-4796en_HK
dc.identifier.issn0375-9601en_HK
dc.identifier.urihttp://hdl.handle.net/10722/137493-
dc.description.abstractTime-resolved Kerr rotation (TRKR) measurements based on pump-probe arrangement were carried out at 5 K on the monolayer fluctuation induced InAs/GaAs quantum disks grown on GaAs substrate without external magnetic field. The lineshape of TRKR signals shows an unusual dependence on the excitation wavelength, especially antisymmetric step-shaped structures appearing when the excitation wavelength was resonantly scanned over the heavy- and light-hole subbands. Moreover, these step structures possess an almost identical decay time of ∼40 ps which is believed to be the characteristic spin dephasing time of electrons in the extremely narrow InAs/GaAs quantum disks. © 2010 Elsevier B.V.en_HK
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physletaen_HK
dc.relation.ispartofPhysics Letters, Section A: General, Atomic and Solid State Physicsen_HK
dc.subjectElectron spinen_HK
dc.subjectInAs/GaAsen_HK
dc.subjectOptical Kerr effecten_HK
dc.subjectQuantum disksen_HK
dc.titleUltrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disksen_HK
dc.typeArticleen_HK
dc.identifier.emailNing, JQ: ningjq@hkucc.hku.hken_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityNing, JQ=rp00769en_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.physleta.2010.09.073en_HK
dc.identifier.scopuseid_2-s2.0-77958105398en_HK
dc.identifier.hkuros190371en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77958105398&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume374en_HK
dc.identifier.issue47en_HK
dc.identifier.spage4793en_HK
dc.identifier.epage4796en_HK
dc.identifier.isiWOS:000284247900013-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridNing, JQ=15845992800en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridWei, ZF=7402259042en_HK
dc.identifier.scopusauthoridRuan, XZ=16424865700en_HK
dc.identifier.scopusauthoridJi, Y=35210173300en_HK
dc.identifier.scopusauthoridZheng, HZ=7403440708en_HK
dc.identifier.scopusauthoridLiu, HC=35240645300en_HK
dc.identifier.citeulike7985429-
dc.identifier.issnl0375-9601-

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