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Article: Superlattices of Bi 2Se 3/In 2Se 3: Growth characteristics and structural properties

TitleSuperlattices of Bi 2Se 3/In 2Se 3: Growth characteristics and structural properties
Authors
Wang, ZYGuo, XLi, HDWong, TLWang, NXie, MH
KeywordsEnergy bandgaps
Growth characteristic
Hetero-interfaces
Normal band
Quantum size effects
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2011, v. 99 n. 2, article no. 023112 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3610971
AbstractSuperlattices (SLs) consisted of alternating Bi 2Se 3 and In 2Se 3 layers are grown on Si(111) by molecular-beam epitaxy. Bi 2Se 3, a three-dimensional topological insulator (TI), showed good chemical and structural compatibility with In 2Se 3, a normal band insulator with large energy bandgap. The individual layers in the SLs are very uniform, and the hetero-interfaces are sharp. Therefore, such SL structures are potential candidates for explorations of the quantum size effects of TIs. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/137495
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000292777300054
Funding AgencyGrant Number
Research Grant Council of Hong Kong Special Administrative Region7061/10P
7061/11P
HKU 10/CRF/08
Funding Information:

We wish to thank W. K. Ho and S. Y. Chui for their help in the growth and XRD experiments, respectively. The project is financially supported by General Research Funds (Nos. 7061/10P and 7061/11P) and a Collaborative Research Fund (HKU 10/CRF/08) from the Research Grant Council of Hong Kong Special Administrative Region.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorWang, ZYen_HK
dc.contributor.authorGuo, Xen_HK
dc.contributor.authorLi, HDen_HK
dc.contributor.authorWong, TLen_HK
dc.contributor.authorWang, Nen_HK
dc.contributor.authorXie, MHen_HK
dc.date.accessioned2011-08-26T14:26:17Z-
dc.date.available2011-08-26T14:26:17Z-
dc.date.issued2011en_HK
dc.identifier.citationApplied Physics Letters, 2011, v. 99 n. 2, article no. 023112-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/137495-
dc.description.abstractSuperlattices (SLs) consisted of alternating Bi 2Se 3 and In 2Se 3 layers are grown on Si(111) by molecular-beam epitaxy. Bi 2Se 3, a three-dimensional topological insulator (TI), showed good chemical and structural compatibility with In 2Se 3, a normal band insulator with large energy bandgap. The individual layers in the SLs are very uniform, and the hetero-interfaces are sharp. Therefore, such SL structures are potential candidates for explorations of the quantum size effects of TIs. © 2011 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2011, v. 99 n. 2, article no. 023112 and may be found at https://doi.org/10.1063/1.3610971-
dc.subjectEnergy bandgaps-
dc.subjectGrowth characteristic-
dc.subjectHetero-interfaces-
dc.subjectNormal band-
dc.subjectQuantum size effects-
dc.titleSuperlattices of Bi 2Se 3/In 2Se 3: Growth characteristics and structural propertiesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=99&issue=2 , article no. 023112&spage=&epage=&date=2011&atitle=Superlattices+of+Bi2Se3/In2Se3:+growth+characteristics+and+structural+propertiesen_US
dc.identifier.emailLi, HD: hdli1978@hkucc.hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityLi, HD=rp00739en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3610971en_HK
dc.identifier.scopuseid_2-s2.0-79960510182en_HK
dc.identifier.hkuros191354en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79960510182&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume99en_HK
dc.identifier.issue2en_HK
dc.identifier.spagearticle no. 023112-
dc.identifier.epagearticle no. 023112-
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000292777300054-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWang, ZY=23978772700en_HK
dc.identifier.scopusauthoridGuo, X=34770102100en_HK
dc.identifier.scopusauthoridLi, HD=36441549600en_HK
dc.identifier.scopusauthoridWong, TL=26321269800en_HK
dc.identifier.scopusauthoridWang, N=7404340430en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.issnl0003-6951-

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