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Article: Impacts of compressive strain on phase diagram of epitaxial Pr 0.5Sr0.5MnO3 films grown on LaAlO3 (0 0 1)
Title | Impacts of compressive strain on phase diagram of epitaxial Pr 0.5Sr0.5MnO3 films grown on LaAlO3 (0 0 1) | ||||
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Authors | |||||
Keywords | Antiferromagnetic insulators Biaxial compressive strain Ferromagnetic metal Thin films Strain effect | ||||
Issue Date | 2011 | ||||
Publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physb | ||||
Citation | Physica B: Condensed Matter, 2011, v. 406 n. 10, p. 1966-1968 How to Cite? | ||||
Abstract | Series Pr0.5Sr0.5MnO3 (PSMO) films of thickness ranging from 20 to 400 nm were epitaxially grown on (0 0 1)-oriented LaAlO3 using pulsed laser deposition method. The biaxial compressive strain effect on phase transition of the films was systematically investigated by both electrical and magnetic measurements. The 60 nm film shows a ferromagnetic metal to antiferromagnetic insulator (FMMAFI) transition at a temperature of ∼190 K. Such a FMMAFI transition is depressed as the films become thicker, and finally disappears in the strain-relaxed situation. On the other hand, the Curie temperature is remarkably enhanced (∼50 °C) when the film thickness increases from 60 to 400 nm. These results may yield the possibility to modulate the phase transitions by varying the structural strain. © 2011 Elsevier B.V. All rights reserved. | ||||
Persistent Identifier | http://hdl.handle.net/10722/139642 | ||||
ISSN | 2023 Impact Factor: 2.8 2023 SCImago Journal Rankings: 0.492 | ||||
ISI Accession Number ID |
Funding Information: The authors acknowledge Jianfeng Wang for the measurement of X-ray diffractometer and acknowledge Yue Wang for helpful discussion. J. Gao wishes to thank the support from the Research Grant Council of Hong Kong (Project no. HKU 702407P). | ||||
Grants |
DC Field | Value | Language |
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dc.contributor.author | Chen, L | en_US |
dc.contributor.author | Chen, Y | en_US |
dc.contributor.author | Ma, Y | en_US |
dc.contributor.author | Lian, G | en_US |
dc.contributor.author | Xiong, G | en_US |
dc.contributor.author | Gao, J | en_US |
dc.date.accessioned | 2011-09-23T05:52:51Z | - |
dc.date.available | 2011-09-23T05:52:51Z | - |
dc.date.issued | 2011 | en_US |
dc.identifier.citation | Physica B: Condensed Matter, 2011, v. 406 n. 10, p. 1966-1968 | en_US |
dc.identifier.issn | 0921-4526 | - |
dc.identifier.uri | http://hdl.handle.net/10722/139642 | - |
dc.description.abstract | Series Pr0.5Sr0.5MnO3 (PSMO) films of thickness ranging from 20 to 400 nm were epitaxially grown on (0 0 1)-oriented LaAlO3 using pulsed laser deposition method. The biaxial compressive strain effect on phase transition of the films was systematically investigated by both electrical and magnetic measurements. The 60 nm film shows a ferromagnetic metal to antiferromagnetic insulator (FMMAFI) transition at a temperature of ∼190 K. Such a FMMAFI transition is depressed as the films become thicker, and finally disappears in the strain-relaxed situation. On the other hand, the Curie temperature is remarkably enhanced (∼50 °C) when the film thickness increases from 60 to 400 nm. These results may yield the possibility to modulate the phase transitions by varying the structural strain. © 2011 Elsevier B.V. All rights reserved. | - |
dc.language | eng | en_US |
dc.publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physb | en_US |
dc.relation.ispartof | Physica B: Condensed Matter | en_US |
dc.subject | Antiferromagnetic insulators | - |
dc.subject | Biaxial compressive strain | - |
dc.subject | Ferromagnetic metal | - |
dc.subject | Thin films | - |
dc.subject | Strain effect | - |
dc.title | Impacts of compressive strain on phase diagram of epitaxial Pr 0.5Sr0.5MnO3 films grown on LaAlO3 (0 0 1) | en_US |
dc.type | Article | en_US |
dc.identifier.email | Gao, J: jugao@hku.hk | en_US |
dc.identifier.authority | Gao, J=rp00699 | en_US |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/j.physb.2011.02.066 | - |
dc.identifier.scopus | eid_2-s2.0-79953732502 | - |
dc.identifier.hkuros | 195568 | en_US |
dc.identifier.volume | 406 | en_US |
dc.identifier.issue | 10 | - |
dc.identifier.spage | 1966 | en_US |
dc.identifier.epage | 1968 | en_US |
dc.identifier.isi | WOS:000290213600027 | - |
dc.relation.project | Field effect in epitaxial thin films of perovskite manganites based on simple planar field effect configurations | - |
dc.identifier.citeulike | 8983845 | - |
dc.identifier.issnl | 0921-4526 | - |