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Article: Topological Anderson insulator phenomena

TitleTopological Anderson insulator phenomena
Authors
Issue Date2011
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter and Materials Physics), 2011, v. 84 n. 3, article no. 035110 , p. 1-9 How to Cite?
AbstractWe study the nature of the disorder-induced quantized conductance, i.e., the phenomena of topological Anderson insulator (TAI). The disorder effect in several different systems where the anomalous Hall effect exists is numerically studied using the tight-binding Hamiltonian. It is found that the TAI phenomena can also exist in the modified Dirac model where the quadratic corrections k2σz are included and the electron-hole symmetry is kept. These phenomena also occur in the graphene system with the next-nearest-neighbor coupling and the staggered sublattice potential. For the graphene sheet with Rashba spin-orbit interaction as well as an exchange field, a precursor of TAI is observed. A comparison between the localization length of the two-dimensional ribbon and two-dimensional cylinder structures clearly reveals the topological nature of these phenomena. Furthermore, analysis on the local current density in anomalous quantum Hall systems where the TAI phenomena may or may not arise reveals the nature of TAI phenomena. In the presence of small disorders, the conductance is not quantized and the bulk and edge states coexist in the system. As disorder strength increases, the bulk state is quickly destroyed, while the robust edge state may survive. When the edge state is robust enough to sustain the strong disorder that completely kills the bulk state, TAI phenomena arise. © 2011 American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/139651
ISSN
2014 Impact Factor: 3.736
ISI Accession Number ID
Funding AgencyGrant Number
Government of HKSARHKU 705409P
Beijing Institute of Technology
Funding Information:

We gratefully acknowledge the financial support by a RGC grant (No. HKU 705409P) from the Government of HKSAR and Excellent young scholars Research Fund of Beijing Institute of Technology.

Grants

 

DC FieldValueLanguage
dc.contributor.authorXing, Yen_US
dc.contributor.authorZhang, Len_US
dc.contributor.authorWang, Jen_US
dc.date.accessioned2011-09-23T05:52:56Z-
dc.date.available2011-09-23T05:52:56Z-
dc.date.issued2011en_US
dc.identifier.citationPhysical Review B (Condensed Matter and Materials Physics), 2011, v. 84 n. 3, article no. 035110 , p. 1-9-
dc.identifier.issn1098-0121-
dc.identifier.urihttp://hdl.handle.net/10722/139651-
dc.description.abstractWe study the nature of the disorder-induced quantized conductance, i.e., the phenomena of topological Anderson insulator (TAI). The disorder effect in several different systems where the anomalous Hall effect exists is numerically studied using the tight-binding Hamiltonian. It is found that the TAI phenomena can also exist in the modified Dirac model where the quadratic corrections k2σz are included and the electron-hole symmetry is kept. These phenomena also occur in the graphene system with the next-nearest-neighbor coupling and the staggered sublattice potential. For the graphene sheet with Rashba spin-orbit interaction as well as an exchange field, a precursor of TAI is observed. A comparison between the localization length of the two-dimensional ribbon and two-dimensional cylinder structures clearly reveals the topological nature of these phenomena. Furthermore, analysis on the local current density in anomalous quantum Hall systems where the TAI phenomena may or may not arise reveals the nature of TAI phenomena. In the presence of small disorders, the conductance is not quantized and the bulk and edge states coexist in the system. As disorder strength increases, the bulk state is quickly destroyed, while the robust edge state may survive. When the edge state is robust enough to sustain the strong disorder that completely kills the bulk state, TAI phenomena arise. © 2011 American Physical Society.-
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_US
dc.relation.ispartofPhysical Review B (Condensed Matter and Materials Physics)en_US
dc.rightsCopyright 2011 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.84.035110-
dc.titleTopological Anderson insulator phenomenaen_US
dc.typeArticleen_US
dc.identifier.emailXing, Y: xingyx@hku.hken_US
dc.identifier.emailWang, J: jianwang@hku.hken_US
dc.identifier.authorityXing, Y=rp00819en_US
dc.identifier.authorityWang, J=rp00799en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1103/PhysRevB.84.035110-
dc.identifier.scopuseid_2-s2.0-79961220997-
dc.identifier.hkuros195642en_US
dc.identifier.volume84en_US
dc.identifier.issue3-
dc.identifier.spagearticle no. 035110, p. 1-
dc.identifier.epagearticle no. 035110, p. 9-
dc.identifier.eissn1550-235X-
dc.identifier.isiWOS:000292924800005-
dc.publisher.placeUnited States-
dc.relation.projectTheoretical investigation of dynamic response, fluctuations, and charge relaxations in disordered mesoscopic conductors.-
dc.identifier.issnl1098-0121-

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