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Article: Optical properties of light-hole excitons in GaN epilayers
Title | Optical properties of light-hole excitons in GaN epilayers | ||||||
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Authors | |||||||
Keywords | Free excitons Gan epilayers Light hole exciton Luminescence lifetime Off-resonance | ||||||
Issue Date | 2010 | ||||||
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | ||||||
Citation | Journal of Applied Physics, 2010, v. 108 n. 11, article no. 116103 How to Cite? | ||||||
Abstract | Optical properties of light-hole free exciton (FX B) in GaN epilayers were investigated by using near-resonance photoluminescence (PL) and time-resolved PL techniques. In contrast to the case of off-resonance PL where only heavy-hole free excitons (FX A) have strong response, FX B band can be well resolved in the near-resonance PL spectra. The variable-temperature near-resonance PL spectra show that the linewidth of FX B broadens faster than the FX A with increasing temperature. Moreover, the luminescence lifetime of FX B is found to be shorter than that of FX A. © 2010 American Institute of Physics. | ||||||
Persistent Identifier | http://hdl.handle.net/10722/143461 | ||||||
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 | ||||||
ISI Accession Number ID |
Funding Information: The work described in this paper was supported by the Joint Research Fund for Overseas Chinese, Hong Kong and Macau Scientists of NSFC (Grant No. 61028012), and partially by a grant from the University Grants Committee of the Hong Kong Special Administrative Region, China (Project No. AoE/P-03/08). | ||||||
References | |||||||
Grants |
DC Field | Value | Language |
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dc.contributor.author | Zhang, F | en_HK |
dc.contributor.author | Xu, SJ | en_HK |
dc.contributor.author | Ning, JQ | en_HK |
dc.contributor.author | Zheng, CC | en_HK |
dc.contributor.author | Zhao, DG | en_HK |
dc.contributor.author | Yang, H | en_HK |
dc.contributor.author | Che, CM | en_HK |
dc.date.accessioned | 2011-11-29T06:25:13Z | - |
dc.date.available | 2011-11-29T06:25:13Z | - |
dc.date.issued | 2010 | en_HK |
dc.identifier.citation | Journal of Applied Physics, 2010, v. 108 n. 11, article no. 116103 | - |
dc.identifier.issn | 0021-8979 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/143461 | - |
dc.description.abstract | Optical properties of light-hole free exciton (FX B) in GaN epilayers were investigated by using near-resonance photoluminescence (PL) and time-resolved PL techniques. In contrast to the case of off-resonance PL where only heavy-hole free excitons (FX A) have strong response, FX B band can be well resolved in the near-resonance PL spectra. The variable-temperature near-resonance PL spectra show that the linewidth of FX B broadens faster than the FX A with increasing temperature. Moreover, the luminescence lifetime of FX B is found to be shorter than that of FX A. © 2010 American Institute of Physics. | en_HK |
dc.language | eng | - |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_HK |
dc.relation.ispartof | Journal of Applied Physics | en_HK |
dc.rights | Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2010, v. 108 n. 11, article no. 116103 and may be found at https://doi.org/10.1063/1.3520218 | - |
dc.subject | Free excitons | - |
dc.subject | Gan epilayers | - |
dc.subject | Light hole exciton | - |
dc.subject | Luminescence lifetime | - |
dc.subject | Off-resonance | - |
dc.title | Optical properties of light-hole excitons in GaN epilayers | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=108&issue=11, article no. 116103&spage=&epage=&date=2010&atitle=Optical+properties+of+light-hole+excitons+in+GaN+epilayers | - |
dc.identifier.email | Xu, SJ: sjxu@hku.hk | en_HK |
dc.identifier.email | Ning, JQ: ningjq@hkucc.hku.hk | en_HK |
dc.identifier.email | Che, CM: cmche@hku.hk | en_HK |
dc.identifier.authority | Xu, SJ=rp00821 | en_HK |
dc.identifier.authority | Ning, JQ=rp00769 | en_HK |
dc.identifier.authority | Che, CM=rp00670 | en_HK |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1063/1.3520218 | en_HK |
dc.identifier.scopus | eid_2-s2.0-78751519466 | en_HK |
dc.identifier.hkuros | 183887 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-78751519466&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 108 | en_HK |
dc.identifier.issue | 11 | en_HK |
dc.identifier.spage | article no. 116103 | - |
dc.identifier.epage | article no. 116103 | - |
dc.identifier.isi | WOS:000285474100158 | - |
dc.publisher.place | United States | en_HK |
dc.relation.project | Institute of Molecular Functional Materials | - |
dc.identifier.scopusauthorid | Zhang, F=36182069500 | en_HK |
dc.identifier.scopusauthorid | Xu, SJ=7404439005 | en_HK |
dc.identifier.scopusauthorid | Ning, JQ=15845992800 | en_HK |
dc.identifier.scopusauthorid | Zheng, CC=36926810900 | en_HK |
dc.identifier.scopusauthorid | Zhao, DG=7403489944 | en_HK |
dc.identifier.scopusauthorid | Yang, H=24336676500 | en_HK |
dc.identifier.scopusauthorid | Che, CM=7102442791 | en_HK |
dc.identifier.issnl | 0021-8979 | - |