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Article: Ion-implantation induced nano distortion layer and its influence on nonlinear optical properties of ZnO single crystals

TitleIon-implantation induced nano distortion layer and its influence on nonlinear optical properties of ZnO single crystals
Authors
Zheng, CCXu, SJNing, JQChen, YNLu, XHLing, CCChe, CMGao, GYHao, JHBrauer, GAnwand, W
KeywordsExcitation light
High quality
Non-linear optical properties
Polarization dependence
Rocking curves
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2011, v. 110 n. 8, article no. 083102 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3651379
AbstractSecond harmonic generation (SHG) and X-ray diffraction rocking curves of high-quality ZnO single crystals implanted by different ions (He, Cu, and Zn) were investigated. Interestingly, it was found that both He- and Zn-implanted samples show a convinced increment in SHG efficiency while the Cu-implanted one does not. X-ray diffraction rocking curves of the samples show satellite structures, and the simulations firmly reveal the formation of quasi-interfaces inside He- and Zn-implanted crystals. These quasi-interfaces lead to SHG improvement in the two samples. Polarization dependence of SHG of the samples on the excitation light also evidences this conclusion. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/143736
ISSN
0021-8979
2021 Impact Factor: 2.877
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID
WOS:000296519900003
Funding AgencyGrant Number
HK RGCHKU 7056/06P
Hong Kong Macau Scientists of NSFC61028012
University Grants Committee Areas of Excellence Scheme of the Hong Kong Special Administrative Region, ChinaAoE/P-03/08
Funding Information:

This work was financially supported by HK RGC-GRF Grants (No. HKU 7056/06P) and Joint Research Fund for Overseas Chinese, Hong Kong and Macau Scientists of NSFC (No. 61028012). This work was also partially supported by University Grants Committee Areas of Excellence Scheme of the Hong Kong Special Administrative Region, China (Project No. [AoE/P-03/08]).

References
References in Scopus
Grants
Institute of Molecular Functional Materials
Multi-photon-excited photoluminescence and dynamic processes of photogenerated carriers in high-quality zinc oxide bulk crystals and nanostructures

 

DC FieldValueLanguage
dc.contributor.authorZheng, CCen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorNing, JQen_HK
dc.contributor.authorChen, YNen_HK
dc.contributor.authorLu, XHen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorChe, CMen_HK
dc.contributor.authorGao, GYen_HK
dc.contributor.authorHao, JHen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.date.accessioned2011-12-21T08:47:54Z-
dc.date.available2011-12-21T08:47:54Z-
dc.date.issued2011en_HK
dc.identifier.citationJournal of Applied Physics, 2011, v. 110 n. 8, article no. 083102-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/143736-
dc.description.abstractSecond harmonic generation (SHG) and X-ray diffraction rocking curves of high-quality ZnO single crystals implanted by different ions (He, Cu, and Zn) were investigated. Interestingly, it was found that both He- and Zn-implanted samples show a convinced increment in SHG efficiency while the Cu-implanted one does not. X-ray diffraction rocking curves of the samples show satellite structures, and the simulations firmly reveal the formation of quasi-interfaces inside He- and Zn-implanted crystals. These quasi-interfaces lead to SHG improvement in the two samples. Polarization dependence of SHG of the samples on the excitation light also evidences this conclusion. © 2011 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2011, v. 110 n. 8, article no. 083102 and may be found at https://doi.org/10.1063/1.3651379-
dc.subjectExcitation light-
dc.subjectHigh quality-
dc.subjectNon-linear optical properties-
dc.subjectPolarization dependence-
dc.subjectRocking curves-
dc.titleIon-implantation induced nano distortion layer and its influence on nonlinear optical properties of ZnO single crystalsen_HK
dc.typeArticleen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailNing, JQ: ningjq@hkucc.hku.hken_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailChe, CM: cmche@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityNing, JQ=rp00769en_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3651379en_HK
dc.identifier.scopuseid_2-s2.0-80655141863en_HK
dc.identifier.hkuros197979en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-80655141863&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume110en_HK
dc.identifier.issue8en_HK
dc.identifier.spagearticle no. 083102-
dc.identifier.epagearticle no. 083102-
dc.identifier.isiWOS:000296519900003-
dc.publisher.placeUnited Statesen_HK
dc.relation.projectInstitute of Molecular Functional Materials-
dc.relation.projectMulti-photon-excited photoluminescence and dynamic processes of photogenerated carriers in high-quality zinc oxide bulk crystals and nanostructures-
dc.identifier.scopusauthoridZheng, CC=36926810900en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridNing, JQ=15845992800en_HK
dc.identifier.scopusauthoridChen, YN=54402568500en_HK
dc.identifier.scopusauthoridLu, XH=7404840069en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridChe, CM=7102442791en_HK
dc.identifier.scopusauthoridGao, GY=15759932200en_HK
dc.identifier.scopusauthoridHao, JH=14025359200en_HK
dc.identifier.scopusauthoridBrauer, G=7101650540en_HK
dc.identifier.scopusauthoridAnwand, W=9432786300en_HK
dc.identifier.issnl0021-8979-

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