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Article: Ordered versus random nucleation of InN islands grown by molecular beam epitaxy

TitleOrdered versus random nucleation of InN islands grown by molecular beam epitaxy
Authors
Zheng, HXie, MHXue, QK
KeywordsIII-Nitride
MBE
Nucleation
STM
Issue Date2012
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/susc
Citation
Surface Science, 2012, v. 606 n. 1-2, p. 120-123 How to Cite?
DOI: http://dx.doi.org/10.1016/j.susc.2011.09.016
AbstractSelf-organization of two-dimensional InN nucleation islands into chains along the 112̄0 directions is revealed by scanning tunneling microscopy (STM). Such alignments occur on surfaces of InN(0001) with GaN insertion layers below, i.e., in InN/GaN/InN sandwich-structures. Increasing the temperature of nucleation leads to a reduced degree of ordering of the islands. For nucleation on surfaces of homogeneous and strain-free InN films, on the other hand, randomly distributed islands are observed. The possible origin of the island-chain formation is discussed. © 2011 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/143780
ISSN
0039-6028
2021 Impact Factor: 2.070
2020 SCImago Journal Rankings: 0.562
ISI Accession Number ID
WOS:000297880900023
Funding AgencyGrant Number
Research Grant Council of the Hong Kong Special Administrative Region, ChinaHKU 7055/06P
7048/08P
Funding Information:

The authors acknowledge the support from W.K. Ho on the UHV system and the advice from Prof. Steve Barrett, the developer of the Image SXM software, on the usage of the software for STM image analysis. This work was financially supported by grants from the Research Grant Council of the Hong Kong Special Administrative Region, China, under the grant nos. HKU 7055/06P and 7048/08P.

References
References in Scopus
Grants
Growth and properties of AlInN thin films

 

DC FieldValueLanguage
dc.contributor.authorZheng, Hen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorXue, QKen_HK
dc.date.accessioned2011-12-21T08:55:11Z-
dc.date.available2011-12-21T08:55:11Z-
dc.date.issued2012en_HK
dc.identifier.citationSurface Science, 2012, v. 606 n. 1-2, p. 120-123en_HK
dc.identifier.issn0039-6028en_HK
dc.identifier.urihttp://hdl.handle.net/10722/143780-
dc.description.abstractSelf-organization of two-dimensional InN nucleation islands into chains along the 112̄0 directions is revealed by scanning tunneling microscopy (STM). Such alignments occur on surfaces of InN(0001) with GaN insertion layers below, i.e., in InN/GaN/InN sandwich-structures. Increasing the temperature of nucleation leads to a reduced degree of ordering of the islands. For nucleation on surfaces of homogeneous and strain-free InN films, on the other hand, randomly distributed islands are observed. The possible origin of the island-chain formation is discussed. © 2011 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/suscen_HK
dc.relation.ispartofSurface Scienceen_HK
dc.subjectIII-Nitrideen_HK
dc.subjectMBEen_HK
dc.subjectNucleationen_HK
dc.subjectSTMen_HK
dc.titleOrdered versus random nucleation of InN islands grown by molecular beam epitaxyen_HK
dc.typeArticleen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.susc.2011.09.016en_HK
dc.identifier.scopuseid_2-s2.0-80355133217en_HK
dc.identifier.hkuros198036en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-80355133217&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume606en_HK
dc.identifier.issue1-2en_HK
dc.identifier.spage120en_HK
dc.identifier.epage123en_HK
dc.identifier.isiWOS:000297880900023-
dc.publisher.placeNetherlandsen_HK
dc.relation.projectGrowth and properties of AlInN thin films-
dc.identifier.scopusauthoridZheng, H=7403441344en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridXue, QK=7201986973en_HK
dc.identifier.citeulike9884493-
dc.identifier.issnl0039-6028-

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