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Article: Printing of sub-20 nm wide graphene ribbon arrays using nanoimprinted graphite stamps and electrostatic force assisted bonding

TitlePrinting of sub-20 nm wide graphene ribbon arrays using nanoimprinted graphite stamps and electrostatic force assisted bonding
Authors
Wang, CMorton, KJFu, ZLi, WDChou, SY
KeywordsElectrostatic Devices
Electrostatic Force
Graphite
Printing
Semiconducting Silicon Compounds
Silicon Wafers
Throughput
Wafer Bonding
Issue Date2011
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano
Citation
Nanotechnology, 2011, v. 22 n. 44 How to Cite?
DOI: http://dx.doi.org/10.1088/0957-4484/22/44/445301
AbstractNano-graphene ribbons are promising in many electronic applications, as their bandgaps can be opened by reducing the widths, e.g.below 20nm. However, a high-throughput method to pattern large-area nano-graphene features is still not available. Here we report a fabrication method of sub-20nm ribbons on graphite stamps by nanoimprint lithography and a transfer-printing of the graphene ribbons to a Si wafer using electrostatic force assisted bonding. These methods provide a path for fast and high-throughput nano-graphene device production. © 2011 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/145465
ISSN
0957-4484
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.631
ISI Accession Number ID
WOS:000296749700005
Funding AgencyGrant Number
National Science Foundation (NSF)
Funding Information:

The authors would like to thank the National Science Foundation (NSF) for their partial support of this work.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorWang, Cen_HK
dc.contributor.authorMorton, KJen_HK
dc.contributor.authorFu, Zen_HK
dc.contributor.authorLi, WDen_HK
dc.contributor.authorChou, SYen_HK
dc.date.accessioned2012-02-23T12:10:50Z-
dc.date.available2012-02-23T12:10:50Z-
dc.date.issued2011en_HK
dc.identifier.citationNanotechnology, 2011, v. 22 n. 44en_HK
dc.identifier.issn0957-4484en_HK
dc.identifier.urihttp://hdl.handle.net/10722/145465-
dc.description.abstractNano-graphene ribbons are promising in many electronic applications, as their bandgaps can be opened by reducing the widths, e.g.below 20nm. However, a high-throughput method to pattern large-area nano-graphene features is still not available. Here we report a fabrication method of sub-20nm ribbons on graphite stamps by nanoimprint lithography and a transfer-printing of the graphene ribbons to a Si wafer using electrostatic force assisted bonding. These methods provide a path for fast and high-throughput nano-graphene device production. © 2011 IOP Publishing Ltd.en_HK
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nanoen_HK
dc.relation.ispartofNanotechnologyen_HK
dc.subjectElectrostatic Devicesen_US
dc.subjectElectrostatic Forceen_US
dc.subjectGraphiteen_US
dc.subjectPrintingen_US
dc.subjectSemiconducting Silicon Compoundsen_US
dc.subjectSilicon Wafersen_US
dc.subjectThroughputen_US
dc.subjectWafer Bondingen_US
dc.titlePrinting of sub-20 nm wide graphene ribbon arrays using nanoimprinted graphite stamps and electrostatic force assisted bondingen_HK
dc.typeArticleen_HK
dc.identifier.emailLi, WD:liwd@hku.hken_HK
dc.identifier.authorityLi, WD=rp01581en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0957-4484/22/44/445301en_HK
dc.identifier.scopuseid_2-s2.0-80054884172en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-80054884172&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume22en_HK
dc.identifier.issue44en_HK
dc.identifier.eissn1361-6528-
dc.identifier.isiWOS:000296749700005-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridWang, C=35096967500en_HK
dc.identifier.scopusauthoridMorton, KJ=8549693300en_HK
dc.identifier.scopusauthoridFu, Z=15839625800en_HK
dc.identifier.scopusauthoridLi, WD=35181575900en_HK
dc.identifier.scopusauthoridChou, SY=7401538612en_HK
dc.identifier.issnl0957-4484-

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