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- Publisher Website: 10.1088/0957-4484/20/15/155303
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Article: Quantized patterning using nanoimprinted blanks
Title | Quantized patterning using nanoimprinted blanks | ||||
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Authors | |||||
Issue Date | 2009 | ||||
Publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano | ||||
Citation | Nanotechnology, 2009, v. 20 n. 15 How to Cite? | ||||
Abstract | Quantum lithography (QL) is a revolutionary approach, increasing the throughput and lowering the cost of scanning electron beam lithography (EBL). But it has not been pursued since its inception 17 years ago, due to the lack of a viable method for making the blanks needed. Here we propose and demonstrate a new general viable approach to QL blank fabrication, that is based on (a) nanoimprinting and (b) a new wafer-scale nanoimprint mold fabrication that uses not EBL but a unique combination of interference lithography, self-perfection, multiple nanoimprinting, and other novel nanopatterning. We fabricated QL blanks (a 2D Cr square tile array of 200nm pitch, 9nm gap, and sub-10nm corners, corresponding to a 50nm node 4 × photomask) and demonstrated that QL can greatly relax the requirements for the EBL tool, increase the throughput and reduce the cost of EBL by orders of magnitude, and is scalable to the 22nm node. © 2009 IOP Publishing Ltd. | ||||
Persistent Identifier | http://hdl.handle.net/10722/145466 | ||||
ISSN | 2023 Impact Factor: 2.9 2023 SCImago Journal Rankings: 0.631 | ||||
ISI Accession Number ID |
Funding Information: The work was supported in part by DARPA. Authors thank Patrick Murphy for proof reading the manuscript. | ||||
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chou, SY | en_HK |
dc.contributor.author | Li, WD | en_HK |
dc.contributor.author | Liang, X | en_HK |
dc.date.accessioned | 2012-02-23T12:10:51Z | - |
dc.date.available | 2012-02-23T12:10:51Z | - |
dc.date.issued | 2009 | en_HK |
dc.identifier.citation | Nanotechnology, 2009, v. 20 n. 15 | en_HK |
dc.identifier.issn | 0957-4484 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/145466 | - |
dc.description.abstract | Quantum lithography (QL) is a revolutionary approach, increasing the throughput and lowering the cost of scanning electron beam lithography (EBL). But it has not been pursued since its inception 17 years ago, due to the lack of a viable method for making the blanks needed. Here we propose and demonstrate a new general viable approach to QL blank fabrication, that is based on (a) nanoimprinting and (b) a new wafer-scale nanoimprint mold fabrication that uses not EBL but a unique combination of interference lithography, self-perfection, multiple nanoimprinting, and other novel nanopatterning. We fabricated QL blanks (a 2D Cr square tile array of 200nm pitch, 9nm gap, and sub-10nm corners, corresponding to a 50nm node 4 × photomask) and demonstrated that QL can greatly relax the requirements for the EBL tool, increase the throughput and reduce the cost of EBL by orders of magnitude, and is scalable to the 22nm node. © 2009 IOP Publishing Ltd. | en_HK |
dc.language | eng | en_US |
dc.publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/nano | en_HK |
dc.relation.ispartof | Nanotechnology | en_HK |
dc.title | Quantized patterning using nanoimprinted blanks | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Li, WD:liwd@hku.hk | en_HK |
dc.identifier.authority | Li, WD=rp01581 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1088/0957-4484/20/15/155303 | en_HK |
dc.identifier.scopus | eid_2-s2.0-65549141686 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-65549141686&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 20 | en_HK |
dc.identifier.issue | 15 | en_HK |
dc.identifier.eissn | 1361-6528 | - |
dc.identifier.isi | WOS:000264539600007 | - |
dc.publisher.place | United Kingdom | en_HK |
dc.identifier.scopusauthorid | Chou, SY=7401538612 | en_HK |
dc.identifier.scopusauthorid | Li, WD=35181575900 | en_HK |
dc.identifier.scopusauthorid | Liang, X=35300036600 | en_HK |
dc.identifier.issnl | 0957-4484 | - |