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Article: First-principles calculation of current density in molecular devices
Title | First-principles calculation of current density in molecular devices | ||||||
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Authors | |||||||
Issue Date | 2011 | ||||||
Publisher | American Physical Society. The Journal's web site is located at http://prb.aps.org/ | ||||||
Citation | Physical Review B (Condensed Matter and Materials Physics), 2011, v. 84 n. 11, article no. 115412 , p. 1-7 How to Cite? | ||||||
Abstract | Based on the single-particle nonequilibrium Green's function (NEGF) technique coupled with the density-functional theory (DFT), we investigate the current density distribution of a molecular device Al-C60-Al from first principles. Due to the presence of nonlocal pseudopotential, the conventional definition of current density is not suitable to describe the correct current density profile inside the molecular device. By using the new definition of current density, which includes the contribution due to the nonlocal potential, our numerical results show that the new definition of current density J(r) conserves the current. In addition, the current obtained from the current density calculated inside the molecular device equals to that calculated from the Landauer-Büttiker formula. Finally, for the molecular device Al-C60-Al, loop currents were found, which confirms the result obtained from the tight-binding approach. © 2011 American Physical Society. | ||||||
Persistent Identifier | http://hdl.handle.net/10722/145573 | ||||||
ISSN | 2014 Impact Factor: 3.736 | ||||||
ISI Accession Number ID |
Funding Information: We gratefully acknowledge the support from Research Grant Council (HKU 705409P) and University Grant Council (Contract No. AoE/P-04/08) of the Government of HKSAR. | ||||||
Grants |
DC Field | Value | Language |
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dc.contributor.author | Zhang, L | en_US |
dc.contributor.author | Wang, B | en_US |
dc.contributor.author | Wang, J | en_US |
dc.date.accessioned | 2012-02-28T01:55:38Z | - |
dc.date.available | 2012-02-28T01:55:38Z | - |
dc.date.issued | 2011 | en_US |
dc.identifier.citation | Physical Review B (Condensed Matter and Materials Physics), 2011, v. 84 n. 11, article no. 115412 , p. 1-7 | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | http://hdl.handle.net/10722/145573 | - |
dc.description.abstract | Based on the single-particle nonequilibrium Green's function (NEGF) technique coupled with the density-functional theory (DFT), we investigate the current density distribution of a molecular device Al-C60-Al from first principles. Due to the presence of nonlocal pseudopotential, the conventional definition of current density is not suitable to describe the correct current density profile inside the molecular device. By using the new definition of current density, which includes the contribution due to the nonlocal potential, our numerical results show that the new definition of current density J(r) conserves the current. In addition, the current obtained from the current density calculated inside the molecular device equals to that calculated from the Landauer-Büttiker formula. Finally, for the molecular device Al-C60-Al, loop currents were found, which confirms the result obtained from the tight-binding approach. © 2011 American Physical Society. | - |
dc.language | eng | en_US |
dc.publisher | American Physical Society. The Journal's web site is located at http://prb.aps.org/ | en_US |
dc.relation.ispartof | Physical Review B (Condensed Matter and Materials Physics) | en_US |
dc.rights | Copyright 2011 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.84.115412 | - |
dc.title | First-principles calculation of current density in molecular devices | en_US |
dc.type | Article | en_US |
dc.identifier.email | Wang, J: jianwang@hku.hk | en_US |
dc.identifier.authority | Wang, J=rp00799 | en_US |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1103/PhysRevB.84.115412 | - |
dc.identifier.scopus | eid_2-s2.0-80053590017 | - |
dc.identifier.hkuros | 198640 | en_US |
dc.identifier.hkuros | 205775 | - |
dc.identifier.volume | 84 | en_US |
dc.identifier.issue | 11 | - |
dc.identifier.spage | article no. 115412, p. 1 | - |
dc.identifier.epage | article no. 115412, p. 7 | - |
dc.identifier.isi | WOS:000294922400004 | - |
dc.publisher.place | United States | - |
dc.relation.project | Theory, Modeling, and Simulation of Emerging Electronics | - |
dc.identifier.issnl | 1098-0121 | - |