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Article: Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes

TitleResidual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes
Authors
Zheng, CCXu, SJNing, JQBao, WWang, JFGao, JLiu, JMZhu, JHLiu, XL
KeywordsCompressive strain
Epilayers grown
Low temperature photoluminescence
Peak position
R-sapphire
Issue Date2012
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science and Technology, 2012, v. 27 n. 3, article no. 035008 How to Cite?
DOI: http://dx.doi.org/10.1088/0268-1242/27/3/035008
AbstractZnO epilayers with a thickness of ∼360 nm were directly grown on r-sapphire planes at different temperatures (550, 500, 450 °C) with metal-organic chemical vapor deposition. Residual strains along the vertical direction and optical properties of the epilayers were investigated by using a variety of techniques including x-ray diffraction, low-temperature photoluminescence (PL), cathodoluminescence and Raman scattering. Compressive strains were revealed to exist in all the epilayers. Their strengths were found to reduce with increasing growth temperature. In addition, the optical properties of the epilayers were studied and the relationship between the strain and PL peak position was unveiled. © 2012 IOP Publishing Ltd.
Persistent Identifierhttp://hdl.handle.net/10722/145579
ISSN
0268-1242
2023 Impact Factor: 1.9
2023 SCImago Journal Rankings: 0.411
ISI Accession Number ID
WOS:000300624000010
Funding AgencyGrant Number
NSFC61028012
HK-RGC-GRFHKU705606P
Funding Information:

This work was supported by the Joint Research Fund for Overseas Chinese, Hong Kong and Macau Scientists of NSFC (grant no 61028012) and HK-RGC-GRF Grants (grant no HKU705606P).

 

DC FieldValueLanguage
dc.contributor.authorZheng, CCen_US
dc.contributor.authorXu, SJen_US
dc.contributor.authorNing, JQen_US
dc.contributor.authorBao, Wen_US
dc.contributor.authorWang, JFen_US
dc.contributor.authorGao, Jen_US
dc.contributor.authorLiu, JMen_US
dc.contributor.authorZhu, JHen_US
dc.contributor.authorLiu, XLen_US
dc.date.accessioned2012-02-28T01:55:41Z-
dc.date.available2012-02-28T01:55:41Z-
dc.date.issued2012en_US
dc.identifier.citationSemiconductor Science and Technology, 2012, v. 27 n. 3, article no. 035008en_US
dc.identifier.issn0268-1242-
dc.identifier.urihttp://hdl.handle.net/10722/145579-
dc.description.abstractZnO epilayers with a thickness of ∼360 nm were directly grown on r-sapphire planes at different temperatures (550, 500, 450 °C) with metal-organic chemical vapor deposition. Residual strains along the vertical direction and optical properties of the epilayers were investigated by using a variety of techniques including x-ray diffraction, low-temperature photoluminescence (PL), cathodoluminescence and Raman scattering. Compressive strains were revealed to exist in all the epilayers. Their strengths were found to reduce with increasing growth temperature. In addition, the optical properties of the epilayers were studied and the relationship between the strain and PL peak position was unveiled. © 2012 IOP Publishing Ltd.-
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_US
dc.relation.ispartofSemiconductor Science and Technologyen_US
dc.rightsSemiconductor Science and Technology. Copyright © Institute of Physics Publishing.-
dc.subjectCompressive strain-
dc.subjectEpilayers grown-
dc.subjectLow temperature photoluminescence-
dc.subjectPeak position-
dc.subjectR-sapphire-
dc.titleResidual strains and optical properties of ZnO thin epilayers grown on r-sapphire planesen_US
dc.typeArticleen_US
dc.identifier.emailZheng, CC: cczheng@hku.hken_US
dc.identifier.emailXu, SJ: sjxu@hkucc.hku.hk; sjxu@hku.hken_US
dc.identifier.emailNing, JQ: jqning@graduate.hku.hken_US
dc.identifier.emailWang, JF: jfwwang@hku.hken_US
dc.identifier.emailGao, J: jugao@hku.hken_US
dc.identifier.authorityXu, S=rp00821en_US
dc.identifier.authorityNing, J=rp00769en_US
dc.identifier.authorityGao, J=rp00699en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0268-1242/27/3/035008-
dc.identifier.scopuseid_2-s2.0-84863141790-
dc.identifier.hkuros198708en_US
dc.identifier.volume27en_US
dc.identifier.issue3, article no. 035008-
dc.identifier.isiWOS:000300624000010-
dc.publisher.placeUnited Kingdom-
dc.identifier.issnl0268-1242-

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