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Article: The optical properties of high quality ZnO/ZnMgO quantum wells on Si(111) substrates
| Title | The optical properties of high quality ZnO/ZnMgO quantum wells on Si(111) substrates | ||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Authors | |||||||||||||||||||||
| Keywords | A. A-ZnO A. C-P-MBE A. ZnMgO | ||||||||||||||||||||
| Issue Date | 2012 | ||||||||||||||||||||
| Publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc | ||||||||||||||||||||
| Citation | Solid State Communications, 2012, v. 152 n. 4, p. 311-313 How to Cite? | ||||||||||||||||||||
| Abstract | The ZnOZn 0.85Mg 0.15O multiple quantum wells (MQWs) were fabricated on Si(111) substrates by plasma-assisted molecular beam epitaxy (P-MBE) using ZnMgO as buffer layers. The RHEED images indicated that the MQWs were of high quality. The free exciton (FE) emission line originated from the well region and its phonon replicas (FE-1LO, FE-2LO and FE-3LO) were observed in the 86 K photoluminescence (PL) spectrum. Blueshift of the FE line in the MQW sample as compared to that in the ZnO bulk was found at temperatures as high as room temperature. Time-resolved PL study on the FE line showed a fast lifetime of 140 ps. The high quality of the MQW structure was revealed by the observation of the quantum-confinement-induced blueshift and shortened lifetime of the FE emission. © 2011 Elsevier Ltd. All rights reserved. | ||||||||||||||||||||
| Persistent Identifier | http://hdl.handle.net/10722/145580 | ||||||||||||||||||||
| ISSN | 2021 Impact Factor: 1.934 2020 SCImago Journal Rankings: 0.429 | ||||||||||||||||||||
| ISI Accession Number ID |
Funding Information: This work was supported by the GRF, RGC, HKSAR (project no.: 7031/08P); the UDF, University of Hong Kong; the Natural Science Foundation of China (Grant No. 60976036); and the Natural Science Foundation of Guangdong Province (Grant No. 8151806001000009), Guangdong Province Nature Science Foundation (No. S2011010001758), and the Scientific and Technological Plan of Guangdong Province and Guangzhou City, (Nos. 2011B010400022 and 11C52090779). | ||||||||||||||||||||
| References |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Su, SC | en_HK |
| dc.contributor.author | Ling, CC | en_HK |
| dc.contributor.author | Lu, YM | en_HK |
| dc.contributor.author | Mei, T | en_HK |
| dc.contributor.author | Zhao, LZ | en_HK |
| dc.contributor.author | Niu, B | en_HK |
| dc.date.accessioned | 2012-02-28T01:55:41Z | - |
| dc.date.available | 2012-02-28T01:55:41Z | - |
| dc.date.issued | 2012 | en_HK |
| dc.identifier.citation | Solid State Communications, 2012, v. 152 n. 4, p. 311-313 | en_HK |
| dc.identifier.issn | 0038-1098 | en_HK |
| dc.identifier.uri | http://hdl.handle.net/10722/145580 | - |
| dc.description.abstract | The ZnOZn 0.85Mg 0.15O multiple quantum wells (MQWs) were fabricated on Si(111) substrates by plasma-assisted molecular beam epitaxy (P-MBE) using ZnMgO as buffer layers. The RHEED images indicated that the MQWs were of high quality. The free exciton (FE) emission line originated from the well region and its phonon replicas (FE-1LO, FE-2LO and FE-3LO) were observed in the 86 K photoluminescence (PL) spectrum. Blueshift of the FE line in the MQW sample as compared to that in the ZnO bulk was found at temperatures as high as room temperature. Time-resolved PL study on the FE line showed a fast lifetime of 140 ps. The high quality of the MQW structure was revealed by the observation of the quantum-confinement-induced blueshift and shortened lifetime of the FE emission. © 2011 Elsevier Ltd. All rights reserved. | en_HK |
| dc.language | eng | en_US |
| dc.publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc | en_HK |
| dc.relation.ispartof | Solid State Communications | en_HK |
| dc.subject | A. A-ZnO | en_HK |
| dc.subject | A. C-P-MBE | en_HK |
| dc.subject | A. ZnMgO | en_HK |
| dc.title | The optical properties of high quality ZnO/ZnMgO quantum wells on Si(111) substrates | en_HK |
| dc.type | Article | en_HK |
| dc.identifier.email | Ling, CC: ccling@hkucc.hku.hk | en_HK |
| dc.identifier.authority | Ling, CC=rp00747 | en_HK |
| dc.description.nature | link_to_subscribed_fulltext | - |
| dc.identifier.doi | 10.1016/j.ssc.2011.11.022 | en_HK |
| dc.identifier.scopus | eid_2-s2.0-84855903983 | en_HK |
| dc.identifier.hkuros | 198749 | en_US |
| dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-84855903983&selection=ref&src=s&origin=recordpage | en_HK |
| dc.identifier.volume | 152 | en_HK |
| dc.identifier.issue | 4 | en_HK |
| dc.identifier.spage | 311 | en_HK |
| dc.identifier.epage | 313 | en_HK |
| dc.identifier.isi | WOS:000300593100018 | - |
| dc.publisher.place | United Kingdom | en_HK |
| dc.identifier.scopusauthorid | Su, SC=24438412700 | en_HK |
| dc.identifier.scopusauthorid | Ling, CC=13310239300 | en_HK |
| dc.identifier.scopusauthorid | Lu, YM=36071877300 | en_HK |
| dc.identifier.scopusauthorid | Mei, T=8259931100 | en_HK |
| dc.identifier.scopusauthorid | Zhao, LZ=16302830500 | en_HK |
| dc.identifier.scopusauthorid | Niu, B=54416083000 | en_HK |
| dc.identifier.citeulike | 10089956 | - |
| dc.identifier.issnl | 0038-1098 | - |