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Article: Suppression of photoconductivity by magnetic field in epitaxial manganite thin films

TitleSuppression of photoconductivity by magnetic field in epitaxial manganite thin films
Authors
KeywordsColossal magnetoresistance materials
External fields
Low temperatures
Majority carriers
Manganite films
Issue Date2012
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2012, v. 100 n. 6, article no. 061902 How to Cite?
AbstractThe erasure of photoinduced resistance (PR) by the magnetic field was investigated in manganite films. The PR was significantly suppressed when a magnetic field was introduced at low temperature. The decrease (or increase) of PR with increment of magnetic field was observed in ferromagnetic (or paramagnetic) phases of films, respectively. Our results are suggested to be the coaction of two effects under magnetic fields: (i) the reorientation of domains and spin directions of photoexcited carriers and (ii) electrons trapped around oxygen vacancies released and recombined with majority carriers in films. The interplay of the external fields is a good demonstration of the strong coupling between spins and charges in colossal magnetoresistance materials. © 2012 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/146410
ISSN
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
Funding AgencyGrant Number
National Natural Science Foundation of China
National Basic Research Program of China
Research Grant Council of Hong KongHKU702409P
URC of the University of Hong Kong
Funding Information:

This work has been supported by the National Natural Science Foundation of China and the National Basic Research Program of China, and also granted by a grant of the Research Grant Council of Hong Kong (Project No. HKU702409P), the URC of the University of Hong Kong.

References

 

DC FieldValueLanguage
dc.contributor.authorGuo, EJen_HK
dc.contributor.authorWang, Len_HK
dc.contributor.authorLu, HBen_HK
dc.contributor.authorGuo, HZen_HK
dc.contributor.authorHe, Men_HK
dc.contributor.authorJin, KJen_HK
dc.contributor.authorYang, GZen_HK
dc.contributor.authorGao, Jen_HK
dc.date.accessioned2012-04-24T07:52:13Z-
dc.date.available2012-04-24T07:52:13Z-
dc.date.issued2012en_HK
dc.identifier.citationApplied Physics Letters, 2012, v. 100 n. 6, article no. 061902-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/146410-
dc.description.abstractThe erasure of photoinduced resistance (PR) by the magnetic field was investigated in manganite films. The PR was significantly suppressed when a magnetic field was introduced at low temperature. The decrease (or increase) of PR with increment of magnetic field was observed in ferromagnetic (or paramagnetic) phases of films, respectively. Our results are suggested to be the coaction of two effects under magnetic fields: (i) the reorientation of domains and spin directions of photoexcited carriers and (ii) electrons trapped around oxygen vacancies released and recombined with majority carriers in films. The interplay of the external fields is a good demonstration of the strong coupling between spins and charges in colossal magnetoresistance materials. © 2012 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2012, v. 100 n. 6, article no. 061902 and may be found at https://doi.org/10.1063/1.3683551-
dc.subjectColossal magnetoresistance materials-
dc.subjectExternal fields-
dc.subjectLow temperatures-
dc.subjectMajority carriers-
dc.subjectManganite films-
dc.titleSuppression of photoconductivity by magnetic field in epitaxial manganite thin filmsen_HK
dc.typeArticleen_HK
dc.identifier.emailGao, J: jhgao@hku.hken_HK
dc.identifier.authorityGao, J=rp00698en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3683551en_HK
dc.identifier.scopuseid_2-s2.0-84863162779en_HK
dc.identifier.hkuros199348en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84863162779&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume100en_HK
dc.identifier.issue6en_HK
dc.identifier.spagearticle no. 061902-
dc.identifier.epagearticle no. 061902-
dc.identifier.isiWOS:000300214000031-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridGuo, EJ=26657238000en_HK
dc.identifier.scopusauthoridWang, L=35243967100en_HK
dc.identifier.scopusauthoridLu, HB=7404843484en_HK
dc.identifier.scopusauthoridGuo, HZ=7404403520en_HK
dc.identifier.scopusauthoridHe, M=15131843300en_HK
dc.identifier.scopusauthoridJin, KJ=55272998200en_HK
dc.identifier.scopusauthoridYang, GZ=7405754515en_HK
dc.identifier.scopusauthoridGao, J=14021339900en_HK
dc.identifier.issnl0003-6951-

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