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Article: Ultrashort-pulse laser heating of silicon to reduce microstructure adhesion
Title | Ultrashort-pulse laser heating of silicon to reduce microstructure adhesion |
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Authors | |
Issue Date | 1996 |
Publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/ijhmt |
Citation | International Journal Of Heat And Mass Transfer, 1996, v. 39 n. 15, p. 3181-3186 How to Cite? |
Abstract | A technique to remove moisture from microelectronic devices and improve device yield in microelectromechanical systems by reducing microstructure surface adhesion is proposed. Ultrashort-pulse laser radiation is used to create excited carriers in, and consequently desorb water from, silicon microstructures. A theoretical model for ultrashort-pulse laser heating of silicon is presented. Calculated carrier temperatures show significant increases at short time scales, while the lattice temperatures remain almost constant, indicating the possibility for water desorption without significant device heating. A preliminary experiment confirming the feasibility of using the technique to decrease microstructure adhesion is discussed. Copyright © 1996 Elsevier Science Ltd. |
Persistent Identifier | http://hdl.handle.net/10722/148931 |
ISSN | 2022 Impact Factor: 5.2 2020 SCImago Journal Rankings: 1.713 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Fushinobu, K | en_HK |
dc.contributor.author | Phinney, LM | en_HK |
dc.contributor.author | Tien, NC | en_HK |
dc.date.accessioned | 2012-06-20T06:16:53Z | - |
dc.date.available | 2012-06-20T06:16:53Z | - |
dc.date.issued | 1996 | en_HK |
dc.identifier.citation | International Journal Of Heat And Mass Transfer, 1996, v. 39 n. 15, p. 3181-3186 | en_HK |
dc.identifier.issn | 0017-9310 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/148931 | - |
dc.description.abstract | A technique to remove moisture from microelectronic devices and improve device yield in microelectromechanical systems by reducing microstructure surface adhesion is proposed. Ultrashort-pulse laser radiation is used to create excited carriers in, and consequently desorb water from, silicon microstructures. A theoretical model for ultrashort-pulse laser heating of silicon is presented. Calculated carrier temperatures show significant increases at short time scales, while the lattice temperatures remain almost constant, indicating the possibility for water desorption without significant device heating. A preliminary experiment confirming the feasibility of using the technique to decrease microstructure adhesion is discussed. Copyright © 1996 Elsevier Science Ltd. | en_HK |
dc.language | eng | en_US |
dc.publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/ijhmt | en_HK |
dc.relation.ispartof | International Journal of Heat and Mass Transfer | en_HK |
dc.title | Ultrashort-pulse laser heating of silicon to reduce microstructure adhesion | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Tien, NC: nctien@hku.hk | en_HK |
dc.identifier.authority | Tien, NC=rp01604 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1016/0017-9310(95)00399-1 | en_HK |
dc.identifier.scopus | eid_2-s2.0-0030268792 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0030268792&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 39 | en_HK |
dc.identifier.issue | 15 | en_HK |
dc.identifier.spage | 3181 | en_HK |
dc.identifier.epage | 3186 | en_HK |
dc.identifier.isi | WOS:A1996UW87500009 | - |
dc.publisher.place | United Kingdom | en_HK |
dc.identifier.scopusauthorid | Fushinobu, K=7004131266 | en_HK |
dc.identifier.scopusauthorid | Phinney, LM=7004124374 | en_HK |
dc.identifier.scopusauthorid | Tien, NC=7006532826 | en_HK |
dc.identifier.issnl | 0017-9310 | - |