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Article: Temperature-coefficient-of-resistance characteristics of sputter-deposited NixAl1-x thin films for 0.5 < x < 1

TitleTemperature-coefficient-of-resistance characteristics of sputter-deposited NixAl1-x thin films for 0.5 < x < 1
Authors
Anand, TJSNg, HPNgan, AHWMeng, XK
KeywordsAlloys
Electrical Properties And Measurements
Resistivity
Sputtering
Issue Date2003
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Citation
Thin Solid Films, 2003, v. 441 n. 1-2, p. 298-306 How to Cite?
DOI: http://dx.doi.org/10.1016/S0040-6090(03)00921-0
AbstractBy investigating the thermal variations of electrical resistance of a range of NixAl1-x sputter-deposited films, where x = 0.5-1, it was found that a thermally-activated transition from the insulator to metal state on increasing temperature occurred only within a narrow range of x from 0.75 to 0.8. At all other values of x investigated, the conduction behavior of the films appeared to be metallic as expected. The same observations were made on two different sputtering systems with different deposition conditions, indicating that the electrical transition from x = 0.75 to 0.8 is a highly reproducible phenomenon. © 2003 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/156680
ISSN
0040-6090
2023 Impact Factor: 2.0
2023 SCImago Journal Rankings: 0.400
ISI Accession Number ID
WOS:000185165600046
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorAnand, TJSen_US
dc.contributor.authorNg, HPen_US
dc.contributor.authorNgan, AHWen_US
dc.contributor.authorMeng, XKen_US
dc.date.accessioned2012-08-08T08:43:30Z-
dc.date.available2012-08-08T08:43:30Z-
dc.date.issued2003en_US
dc.identifier.citationThin Solid Films, 2003, v. 441 n. 1-2, p. 298-306en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://hdl.handle.net/10722/156680-
dc.description.abstractBy investigating the thermal variations of electrical resistance of a range of NixAl1-x sputter-deposited films, where x = 0.5-1, it was found that a thermally-activated transition from the insulator to metal state on increasing temperature occurred only within a narrow range of x from 0.75 to 0.8. At all other values of x investigated, the conduction behavior of the films appeared to be metallic as expected. The same observations were made on two different sputtering systems with different deposition conditions, indicating that the electrical transition from x = 0.75 to 0.8 is a highly reproducible phenomenon. © 2003 Elsevier B.V. All rights reserved.en_US
dc.languageengen_US
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsfen_US
dc.relation.ispartofThin Solid Filmsen_US
dc.subjectAlloysen_US
dc.subjectElectrical Properties And Measurementsen_US
dc.subjectResistivityen_US
dc.subjectSputteringen_US
dc.titleTemperature-coefficient-of-resistance characteristics of sputter-deposited NixAl1-x thin films for 0.5 < x < 1en_US
dc.typeArticleen_US
dc.identifier.emailNgan, AHW:hwngan@hkucc.hku.hken_US
dc.identifier.authorityNgan, AHW=rp00225en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0040-6090(03)00921-0en_US
dc.identifier.scopuseid_2-s2.0-0042420868en_US
dc.identifier.hkuros88714-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0042420868&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume441en_US
dc.identifier.issue1-2en_US
dc.identifier.spage298en_US
dc.identifier.epage306en_US
dc.identifier.isiWOS:000185165600046-
dc.publisher.placeSwitzerlanden_US
dc.identifier.scopusauthoridAnand, TJS=23491253200en_US
dc.identifier.scopusauthoridNg, HP=7401619209en_US
dc.identifier.scopusauthoridNgan, AHW=7006827202en_US
dc.identifier.scopusauthoridMeng, XK=7401630110en_US
dc.identifier.issnl0040-6090-

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