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Article: Engineering nonlinearity into memristors for passive crossbar applications

TitleEngineering nonlinearity into memristors for passive crossbar applications
Authors
Joshua Yang, JZhang, MXPickett, MDMiao, FPaul Strachan, JLi, WDYi, WOhlberg, DAAJoon Choi, BWu, WNickel, JHMedeirosRibeiro, GStanley Williams, R
Issue Date2012
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2012, v. 100 n. 11, article no. 113501 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3693392
AbstractAlthough TaO x memristors have demonstrated encouraging write/erase endurance and nanosecond switching speeds, the linear current-voltage (I-V) characteristic in the low resistance state limits their applications in large passive crossbar arrays. We demonstrate here that a TiO 2-x/TaO x oxide heterostructure incorporated into a 50 nm× 50 nm memristor displays a very large nonlinearity such that I(V/2) ≈ I(V)/100 for V ≈ 1 volt, which is caused by current-controlled negative differential resistance in the device. © 2012 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/157191
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000302204900079
Funding AgencyGrant Number
US Government's Nano-Enabled Technology Initiative
Funding Information:

We thank Frederick Perner and Hans Cho for valuable discussions, X. Li, T. Ha, and C. Le for excellent experimental assistance. This work is supported in part by the US Government's Nano-Enabled Technology Initiative.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorJoshua Yang, Jen_US
dc.contributor.authorZhang, MXen_US
dc.contributor.authorPickett, MDen_US
dc.contributor.authorMiao, Fen_US
dc.contributor.authorPaul Strachan, Jen_US
dc.contributor.authorLi, WDen_US
dc.contributor.authorYi, Wen_US
dc.contributor.authorOhlberg, DAAen_US
dc.contributor.authorJoon Choi, Ben_US
dc.contributor.authorWu, Wen_US
dc.contributor.authorNickel, JHen_US
dc.contributor.authorMedeirosRibeiro, Gen_US
dc.contributor.authorStanley Williams, Ren_US
dc.date.accessioned2012-08-08T08:45:45Z-
dc.date.available2012-08-08T08:45:45Z-
dc.date.issued2012en_US
dc.identifier.citationApplied Physics Letters, 2012, v. 100 n. 11, article no. 113501-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/157191-
dc.description.abstractAlthough TaO x memristors have demonstrated encouraging write/erase endurance and nanosecond switching speeds, the linear current-voltage (I-V) characteristic in the low resistance state limits their applications in large passive crossbar arrays. We demonstrate here that a TiO 2-x/TaO x oxide heterostructure incorporated into a 50 nm× 50 nm memristor displays a very large nonlinearity such that I(V/2) ≈ I(V)/100 for V ≈ 1 volt, which is caused by current-controlled negative differential resistance in the device. © 2012 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleEngineering nonlinearity into memristors for passive crossbar applicationsen_US
dc.typeArticleen_US
dc.identifier.emailLi, WD:liwd@hku.hken_US
dc.identifier.authorityLi, WD=rp01581en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.3693392en_US
dc.identifier.scopuseid_2-s2.0-84859984075en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84859984075&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume100en_US
dc.identifier.issue11en_US
dc.identifier.spagearticle no. 113501-
dc.identifier.epagearticle no. 113501-
dc.identifier.isiWOS:000302204900079-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridJoshua Yang, J=26655746100en_US
dc.identifier.scopusauthoridZhang, MX=36728802600en_US
dc.identifier.scopusauthoridPickett, MD=11139874100en_US
dc.identifier.scopusauthoridMiao, F=35789099800en_US
dc.identifier.scopusauthoridPaul Strachan, J=55193452300en_US
dc.identifier.scopusauthoridLi, WD=35181575900en_US
dc.identifier.scopusauthoridYi, W=55155036400en_US
dc.identifier.scopusauthoridOhlberg, DAA=6701488190en_US
dc.identifier.scopusauthoridJoon Choi, B=14039231000en_US
dc.identifier.scopusauthoridWu, W=55193266900en_US
dc.identifier.scopusauthoridNickel, JH=54894289300en_US
dc.identifier.scopusauthoridMedeirosRibeiro, G=7004457808en_US
dc.identifier.scopusauthoridStanley Williams, R=24318696000en_US
dc.identifier.issnl0003-6951-

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