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Article: Conduction band offset of InGaN/AlInGaN quantum wells studied by deep level transient spectroscopic technique

TitleConduction band offset of InGaN/AlInGaN quantum wells studied by deep level transient spectroscopic technique
Authors
Lu, LSu, SLing, CCXu, SZhao, DZhu, JYang, HWang, JGe, W
Issue Date2012
PublisherThe Japan Society of Applied Physics.
Citation
Applied Physics Express, 2012, v. 5 n. 9 How to Cite?
DOI: http://dx.doi.org/10.1143/APEX.5.091001
AbstractThe heterostructure conduction band offset ΔE c in In 0.08Ga 0.92N/Al 0.075In 0.045Ga 0.88N quantum wells (QWs) was characterized by capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements made on the QWs, which acted as the light-emitting active layer of GaN p-n light-emitting diodes (LEDs). The thermal emission energy of the In 0.08Ga 0.92N wells was found to be 0.21 ± 0.01 eV. This corresponds to a conduction band offset of about 0.25 ± 0.02 eV. © 2012 The Japan Society of Applied Physics.
Persistent Identifierhttp://hdl.handle.net/10722/164514
ISSN
1882-0778
2023 Impact Factor: 2.3
2023 SCImago Journal Rankings: 0.487
ISI Accession Number ID
WOS:000308694100001
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLu, Len_HK
dc.contributor.authorSu, Sen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorXu, Sen_HK
dc.contributor.authorZhao, Den_HK
dc.contributor.authorZhu, Jen_HK
dc.contributor.authorYang, Hen_HK
dc.contributor.authorWang, Jen_HK
dc.contributor.authorGe, Wen_HK
dc.date.accessioned2012-09-20T08:04:53Z-
dc.date.available2012-09-20T08:04:53Z-
dc.date.issued2012en_HK
dc.identifier.citationApplied Physics Express, 2012, v. 5 n. 9en_HK
dc.identifier.issn1882-0778en_HK
dc.identifier.urihttp://hdl.handle.net/10722/164514-
dc.description.abstractThe heterostructure conduction band offset ΔE c in In 0.08Ga 0.92N/Al 0.075In 0.045Ga 0.88N quantum wells (QWs) was characterized by capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) measurements made on the QWs, which acted as the light-emitting active layer of GaN p-n light-emitting diodes (LEDs). The thermal emission energy of the In 0.08Ga 0.92N wells was found to be 0.21 ± 0.01 eV. This corresponds to a conduction band offset of about 0.25 ± 0.02 eV. © 2012 The Japan Society of Applied Physics.en_HK
dc.languageengen_US
dc.publisherThe Japan Society of Applied Physics.en_US
dc.relation.ispartofApplied Physics Expressen_HK
dc.titleConduction band offset of InGaN/AlInGaN quantum wells studied by deep level transient spectroscopic techniqueen_HK
dc.typeArticleen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturelink_to_OA_fulltext-
dc.identifier.doi10.1143/APEX.5.091001en_HK
dc.identifier.scopuseid_2-s2.0-84866404150en_HK
dc.identifier.hkuros209217en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84866404150&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume5en_HK
dc.identifier.issue9en_HK
dc.identifier.spage091001:1en_US
dc.identifier.epage3en_US
dc.identifier.isiWOS:000308694100001-
dc.identifier.scopusauthoridLu, L=55360192700en_HK
dc.identifier.scopusauthoridSu, S=24438412700en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridXu, S=55223139800en_HK
dc.identifier.scopusauthoridZhao, D=55268587300en_HK
dc.identifier.scopusauthoridZhu, J=55360298900en_HK
dc.identifier.scopusauthoridYang, H=37027203600en_HK
dc.identifier.scopusauthoridWang, J=36599750200en_HK
dc.identifier.scopusauthoridGe, W=55361152800en_HK
dc.identifier.issnl1882-0778-

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