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Conference Paper: High mobility low driving voltage organic transistor with high k amorphous BST (Ba0.7Sr0.3TiO3) gate dielectric on flexible substrate

TitleHigh mobility low driving voltage organic transistor with high k amorphous BST (Ba0.7Sr0.3TiO3) gate dielectric on flexible substrate
Authors
Issue Date2011
Citation
The 2011 Fall Meeting & Exhibit of the Materials Research Society, Boston, MA., 28 November- 2 December 2011. How to Cite?
DescriptionPoster Presentation
Persistent Identifierhttp://hdl.handle.net/10722/165347

 

DC FieldValueLanguage
dc.contributor.authorWang, ZRen_US
dc.contributor.authorXin, JZen_US
dc.contributor.authorRen, XCen_US
dc.contributor.authorLeung, CWen_US
dc.contributor.authorChan, PKLen_US
dc.date.accessioned2012-09-20T08:17:41Z-
dc.date.available2012-09-20T08:17:41Z-
dc.date.issued2011en_US
dc.identifier.citationThe 2011 Fall Meeting & Exhibit of the Materials Research Society, Boston, MA., 28 November- 2 December 2011.en_US
dc.identifier.urihttp://hdl.handle.net/10722/165347-
dc.descriptionPoster Presentation-
dc.languageengen_US
dc.relation.ispartofMRS Fall Meeting & Exhibit 2011en_US
dc.titleHigh mobility low driving voltage organic transistor with high k amorphous BST (Ba0.7Sr0.3TiO3) gate dielectric on flexible substrateen_US
dc.typeConference_Paperen_US
dc.identifier.emailChan, PKL: pklc@hku.hken_US
dc.identifier.authorityChan, PKL=rp01532en_US
dc.identifier.hkuros207160en_US

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