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Article: Corrigendum to: "Electrodeposition for antibacterial nickel-oxide-based coatings" [Thin Solid Films 517 (2009) 6527-6530] (DOI:10.1016/j.tsf.2009.04.018)

TitleCorrigendum to: "Electrodeposition for antibacterial nickel-oxide-based coatings" [Thin Solid Films 517 (2009) 6527-6530] (DOI:10.1016/j.tsf.2009.04.018)
Authors
Xi, YYHuang, BQDjurišić, ABChan, CMNLeung, FCCChan, WKAu, DTW
Issue Date2010
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Citation
Thin Solid Films, 2010, v. 518 n. 15, p. 4482 How to Cite?
DOI: http://dx.doi.org/10.1016/j.tsf.2009.11.006
Persistent Identifierhttp://hdl.handle.net/10722/168462
ISSN
0040-6090
2023 Impact Factor: 2.0
2023 SCImago Journal Rankings: 0.400
ISI Accession Number ID
WOS:000278242000075

 

DC FieldValueLanguage
dc.contributor.authorXi, YYen_HK
dc.contributor.authorHuang, BQen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorChan, CMNen_HK
dc.contributor.authorLeung, FCCen_HK
dc.contributor.authorChan, WKen_HK
dc.contributor.authorAu, DTWen_HK
dc.date.accessioned2012-10-08T03:19:14Z-
dc.date.available2012-10-08T03:19:14Z-
dc.date.issued2010en_HK
dc.identifier.citationThin Solid Films, 2010, v. 518 n. 15, p. 4482en_HK
dc.identifier.issn0040-6090en_HK
dc.identifier.urihttp://hdl.handle.net/10722/168462-
dc.languageengen_US
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsfen_HK
dc.relation.ispartofThin Solid Filmsen_HK
dc.titleCorrigendum to: "Electrodeposition for antibacterial nickel-oxide-based coatings" [Thin Solid Films 517 (2009) 6527-6530] (DOI:10.1016/j.tsf.2009.04.018)en_HK
dc.typeArticleen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailLeung, FCC: fcleung@hkucc.hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityLeung, FCC=rp00731en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/j.tsf.2009.11.006en_HK
dc.identifier.scopuseid_2-s2.0-77953175879en_HK
dc.identifier.volume518en_HK
dc.identifier.issue15en_HK
dc.identifier.spage4482en_HK
dc.identifier.epage4482en_HK
dc.identifier.isiWOS:000278242000075-
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridXi, YY=23053521800en_HK
dc.identifier.scopusauthoridHuang, BQ=35240301800en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridChan, CMN=35239877600en_HK
dc.identifier.scopusauthoridLeung, FCC=7103078633en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK
dc.identifier.scopusauthoridAu, DTW=35239719800en_HK
dc.identifier.issnl0040-6090-

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