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Conference Paper: HEAVY ELECTRODEPOSITION OF RHODIUM BY PULSE CURRENT.

TitleHEAVY ELECTRODEPOSITION OF RHODIUM BY PULSE CURRENT.
Authors
Fung, YSMiu, WS
Issue Date1985
Citation
Annual Technical Conference - American Electroplaters' Society, 1985, p. o. 6p How to Cite?
AbstractHeavy electrodeposition of rhodium is required for various industrial applications. However, cracking of the coating is observed under dc. Thus, the pulse current method was studied and a crackfree thick deposit was obtained under a wide range of operating parameters. The current efficiency, contact resistance, porosity, microhardness and external morphology of the deposit are investigated and the results will be presented and discussed. Various areas for application of the method will be identified and discussed.
Persistent Identifierhttp://hdl.handle.net/10722/168815
ISSN
0270-2622

 

DC FieldValueLanguage
dc.contributor.authorFung, YSen_US
dc.contributor.authorMiu, WSen_US
dc.date.accessioned2012-10-08T03:34:32Z-
dc.date.available2012-10-08T03:34:32Z-
dc.date.issued1985en_US
dc.identifier.citationAnnual Technical Conference - American Electroplaters' Society, 1985, p. o. 6pen_US
dc.identifier.issn0270-2622en_US
dc.identifier.urihttp://hdl.handle.net/10722/168815-
dc.description.abstractHeavy electrodeposition of rhodium is required for various industrial applications. However, cracking of the coating is observed under dc. Thus, the pulse current method was studied and a crackfree thick deposit was obtained under a wide range of operating parameters. The current efficiency, contact resistance, porosity, microhardness and external morphology of the deposit are investigated and the results will be presented and discussed. Various areas for application of the method will be identified and discussed.en_US
dc.languageengen_US
dc.relation.ispartofAnnual Technical Conference - American Electroplaters' Societyen_US
dc.titleHEAVY ELECTRODEPOSITION OF RHODIUM BY PULSE CURRENT.en_US
dc.typeConference_Paperen_US
dc.identifier.emailFung, YS:ysfung@hku.hken_US
dc.identifier.authorityFung, YS=rp00697en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-18344399912en_US
dc.identifier.spageo. 6pen_US
dc.identifier.scopusauthoridFung, YS=13309754700en_US
dc.identifier.scopusauthoridMiu, WS=6603204972en_US
dc.identifier.issnl0270-2622-

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