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Conference Paper: ZnO nanorods for light-emitting diode applications

TitleZnO nanorods for light-emitting diode applications
Authors
Chen, XNg, AMCWong, KKDjurišić, ABFang, FChan, WKFong, PWKLui, HFSurya, C
Keywordselectrodeposition
LED
vapor deposition
zinc oxide
Issue Date2011
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Proceedings Of Spie - The International Society For Optical Engineering, 2011, v. 7940 How to Cite?
DOI: http://dx.doi.org/10.1117/12.878940
AbstractWe investigated the influence of the growth method, growth conditions, and post-growth treatments on the ZnO nanorod properties and the performance of heterojunction light emitting diodes (LEDs) based on ZnO nanorods. Due to small lattice mismatch between GaN and ZnO, we will mainly consider p-GaN/n-ZnO nanorod heterojunctions. The influence of p-GaN substrate and the influence of growth method and growth conditions used for ZnO nanorods on the LED performance will be discussed. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).
Persistent Identifierhttp://hdl.handle.net/10722/168875
ISSN
0277-786X
2023 SCImago Journal Rankings: 0.152
ISI Accession Number ID
WOS:000293629300005
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChen, Xen_HK
dc.contributor.authorNg, AMCen_HK
dc.contributor.authorWong, KKen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorFang, Fen_HK
dc.contributor.authorChan, WKen_HK
dc.contributor.authorFong, PWKen_HK
dc.contributor.authorLui, HFen_HK
dc.contributor.authorSurya, Cen_HK
dc.date.accessioned2012-10-08T03:35:20Z-
dc.date.available2012-10-08T03:35:20Z-
dc.date.issued2011en_HK
dc.identifier.citationProceedings Of Spie - The International Society For Optical Engineering, 2011, v. 7940en_US
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/168875-
dc.description.abstractWe investigated the influence of the growth method, growth conditions, and post-growth treatments on the ZnO nanorod properties and the performance of heterojunction light emitting diodes (LEDs) based on ZnO nanorods. Due to small lattice mismatch between GaN and ZnO, we will mainly consider p-GaN/n-ZnO nanorod heterojunctions. The influence of p-GaN substrate and the influence of growth method and growth conditions used for ZnO nanorods on the LED performance will be discussed. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).en_HK
dc.languageengen_US
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_HK
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_HK
dc.subjectelectrodepositionen_HK
dc.subjectLEDen_HK
dc.subjectvapor depositionen_HK
dc.subjectzinc oxideen_HK
dc.titleZnO nanorods for light-emitting diode applicationsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1117/12.878940en_HK
dc.identifier.scopuseid_2-s2.0-79955105368en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79955105368&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume7940en_HK
dc.identifier.isiWOS:000293629300005-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, X=35274291400en_HK
dc.identifier.scopusauthoridNg, AMC=12140078600en_HK
dc.identifier.scopusauthoridWong, KK=37056419600en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridFang, F=7202929817en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK
dc.identifier.scopusauthoridFong, PWK=24080393500en_HK
dc.identifier.scopusauthoridLui, HF=36815539600en_HK
dc.identifier.scopusauthoridSurya, C=7003939256en_HK
dc.identifier.issnl0277-786X-

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