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Article: Resistive Switching Behavior of Partially Anodized Aluminum Thin Film at Elevated Temperatures

TitleResistive Switching Behavior of Partially Anodized Aluminum Thin Film at Elevated Temperatures
Authors
Zhu, WChen, TPYang, MLiu, YFung, SHY
KeywordsAluminum oxide
resistive random access memory
resistive switching
Issue Date2012
Citation
IEEE Transactions on Electron Devices, 2012, v. 59, p. 2363-2367 How to Cite?
DOI: http://dx.doi.org/10.1109/TED.2012.2205692
Persistent Identifierhttp://hdl.handle.net/10722/169260
ISSN
0018-9383
2021 Impact Factor: 3.221
2020 SCImago Journal Rankings: 0.828
ISI Accession Number ID
WOS:000307905200014

 

DC FieldValueLanguage
dc.contributor.authorZhu, Wen_US
dc.contributor.authorChen, TPen_US
dc.contributor.authorYang, Men_US
dc.contributor.authorLiu, Yen_US
dc.contributor.authorFung, SHYen_US
dc.date.accessioned2012-10-18T08:47:46Z-
dc.date.available2012-10-18T08:47:46Z-
dc.date.issued2012en_US
dc.identifier.citationIEEE Transactions on Electron Devices, 2012, v. 59, p. 2363-2367en_US
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/169260-
dc.languageengen_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.subjectAluminum oxide-
dc.subjectresistive random access memory-
dc.subjectresistive switching-
dc.titleResistive Switching Behavior of Partially Anodized Aluminum Thin Film at Elevated Temperaturesen_US
dc.typeArticleen_US
dc.identifier.emailFung, SHY: sfung@hku.hken_US
dc.identifier.authorityFung, SHY=rp00695en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TED.2012.2205692-
dc.identifier.scopuseid_2-s2.0-84865520167-
dc.identifier.hkuros212058en_US
dc.identifier.volume59en_US
dc.identifier.spage2363en_US
dc.identifier.epage2367en_US
dc.identifier.eissn1557-9646-
dc.identifier.isiWOS:000307905200014-
dc.identifier.issnl0018-9383-

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