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Article: Conduction mechanisms at low- and high-resistance states in aluminum/anodic aluminum oxide/aluminum thin film structure
Title | Conduction mechanisms at low- and high-resistance states in aluminum/anodic aluminum oxide/aluminum thin film structure |
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Authors | |
Keywords | Al oxide Aluminum oxides Conduction mechanism Electron hopping High field |
Issue Date | 2012 |
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp |
Citation | Journal of Applied Physics, 2012, v. 112 n. 6, article no. 063706 How to Cite? |
Abstract | In this work, conduction mechanisms of Al/anodic Al oxide/ Al structure, which exhibits resistive switching behavior, have been investigated. The low-resistance state shows ohmic conduction with a metal-like behavior similar to that of pure aluminum. The situation can be explained by the existence of the metallic filament formed by the excess Al in the Al oxide. On the other hand, the high-resistance state (HRS) shows two distinct regimes: ohmic conduction at low fields with a semiconductor-like behavior; and a non-ohmic conduction at high fields. The ohmic conduction of HRS at low fields is attributed to the electron hopping between the states in the oxide with the activation energy of ∼0.23 eV. It is suggested that the conduction of HRS at high fields (the maximum voltage is lower than the set voltage) is due to the field-enhanced thermal excitation of the electrons trapped in the states of the metallic Al nano-phase into the conduction band of the Al oxide or the electron emission from the potential well of the metallic Al nano-phase to the conduction band. © 2012 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/169261 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Zhu, W | en_US |
dc.contributor.author | Chen, TP | en_US |
dc.contributor.author | Liu, Y | en_US |
dc.contributor.author | Fung, SHY | en_US |
dc.date.accessioned | 2012-10-18T08:47:47Z | - |
dc.date.available | 2012-10-18T08:47:47Z | - |
dc.date.issued | 2012 | en_US |
dc.identifier.citation | Journal of Applied Physics, 2012, v. 112 n. 6, article no. 063706 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10722/169261 | - |
dc.description.abstract | In this work, conduction mechanisms of Al/anodic Al oxide/ Al structure, which exhibits resistive switching behavior, have been investigated. The low-resistance state shows ohmic conduction with a metal-like behavior similar to that of pure aluminum. The situation can be explained by the existence of the metallic filament formed by the excess Al in the Al oxide. On the other hand, the high-resistance state (HRS) shows two distinct regimes: ohmic conduction at low fields with a semiconductor-like behavior; and a non-ohmic conduction at high fields. The ohmic conduction of HRS at low fields is attributed to the electron hopping between the states in the oxide with the activation energy of ∼0.23 eV. It is suggested that the conduction of HRS at high fields (the maximum voltage is lower than the set voltage) is due to the field-enhanced thermal excitation of the electrons trapped in the states of the metallic Al nano-phase into the conduction band of the Al oxide or the electron emission from the potential well of the metallic Al nano-phase to the conduction band. © 2012 American Institute of Physics. | - |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_US |
dc.relation.ispartof | Journal of Applied Physics | en_US |
dc.rights | Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2012, v. 112 n. 6, article no. 063706 and may be found at https://doi.org/10.1063/1.4754011 | - |
dc.subject | Al oxide | - |
dc.subject | Aluminum oxides | - |
dc.subject | Conduction mechanism | - |
dc.subject | Electron hopping | - |
dc.subject | High field | - |
dc.title | Conduction mechanisms at low- and high-resistance states in aluminum/anodic aluminum oxide/aluminum thin film structure | en_US |
dc.type | Article | en_US |
dc.identifier.email | Chen, TP: echentp@ntu.edu.sg | en_US |
dc.identifier.email | Fung, SHY: sfung@hku.hk | - |
dc.identifier.authority | Fung, SHY=rp00695 | en_US |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1063/1.4754011 | - |
dc.identifier.scopus | eid_2-s2.0-84867081673 | - |
dc.identifier.hkuros | 212064 | en_US |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-84867081673&selection=ref&src=s&origin=recordpage | - |
dc.identifier.volume | 112 | en_US |
dc.identifier.issue | 6 | - |
dc.identifier.spage | article no. 063706 | - |
dc.identifier.epage | article no. 063706 | - |
dc.identifier.isi | WOS:000309423200060 | - |
dc.publisher.place | United States | - |
dc.identifier.scopusauthorid | Zhu, W=7404232937 | - |
dc.identifier.scopusauthorid | Chen, TP=7405540443 | - |
dc.identifier.scopusauthorid | Liu, Y=36063269800 | - |
dc.identifier.scopusauthorid | Fung, S=7201970040 | - |
dc.identifier.issnl | 0021-8979 | - |