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Article: Polarization dependence of intraband absorption in self-organized quantum dots

TitlePolarization dependence of intraband absorption in self-organized quantum dots
Authors
Chua, SJXu, SJZhang, XHWang, XCMei, TFan, WJWang, CHJiang, JXie, XG
Issue Date1998
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1998, v. 73 n. 14, p. 1997-1999 How to Cite?
DOI: http://dx.doi.org/10.1063/1.122347
AbstractPhotoluminescence and intraband absorption were investigated in n-doped self-organized InAs and In 0.35Ga 0.65As quantum dots grown on a GaAs substrate. Intraband absorption of the dots is strongly polarized along the growth axis in the mid infrared spectral range. The absorption is maximum at around 120 meV for InAs dots and at 130 meV for In 0.35Ga 0.65As dots. The experimental results on InAs dots are in agreement with published theoretical calculations. © 1998 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/174644
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000076183300025
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChua, SJen_US
dc.contributor.authorXu, SJen_US
dc.contributor.authorZhang, XHen_US
dc.contributor.authorWang, XCen_US
dc.contributor.authorMei, Ten_US
dc.contributor.authorFan, WJen_US
dc.contributor.authorWang, CHen_US
dc.contributor.authorJiang, Jen_US
dc.contributor.authorXie, XGen_US
dc.date.accessioned2012-11-26T08:46:40Z-
dc.date.available2012-11-26T08:46:40Z-
dc.date.issued1998en_US
dc.identifier.citationApplied Physics Letters, 1998, v. 73 n. 14, p. 1997-1999-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/174644-
dc.description.abstractPhotoluminescence and intraband absorption were investigated in n-doped self-organized InAs and In 0.35Ga 0.65As quantum dots grown on a GaAs substrate. Intraband absorption of the dots is strongly polarized along the growth axis in the mid infrared spectral range. The absorption is maximum at around 120 meV for InAs dots and at 130 meV for In 0.35Ga 0.65As dots. The experimental results on InAs dots are in agreement with published theoretical calculations. © 1998 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titlePolarization dependence of intraband absorption in self-organized quantum dotsen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.122347en_US
dc.identifier.scopuseid_2-s2.0-0001481003en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0001481003&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume73en_US
dc.identifier.issue14en_US
dc.identifier.spage1997en_US
dc.identifier.epage1999en_US
dc.identifier.isiWOS:000076183300025-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridZhang, XH=8543612300en_US
dc.identifier.scopusauthoridWang, XC=8527523100en_US
dc.identifier.scopusauthoridMei, T=8259931100en_US
dc.identifier.scopusauthoridFan, WJ=34770971100en_US
dc.identifier.scopusauthoridWang, CH=8231951600en_US
dc.identifier.scopusauthoridJiang, J=55228867800en_US
dc.identifier.scopusauthoridXie, XG=8642311000en_US
dc.identifier.issnl0003-6951-

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