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Article: Theoretical study of leakage current effect on surface photovoltage induced by photoemission

TitleTheoretical study of leakage current effect on surface photovoltage induced by photoemission
Authors
Chen, TPBeling, CDFung, S
Issue Date1992
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc
Citation
Solid State Communications, 1992, v. 84 n. 8, p. 815-818 How to Cite?
AbstractRecent studies show that surface photovoltage (SPV) seriously affects the determination of the surface band bending by photoelectron spectroscopy. This work demonstrates that SPV is strongly affected by the leakage current which depends on the metal coverage and other experimental factors. The results of our calculation account for the observed reduction of SPV with increasing coverage and the strong photo-flux dependence of SPV. This study suggests the importance of the leakage current effect on SPV in the determination of the coverage-dependent surface band bending from photoemission experiments. © 1992.
Persistent Identifierhttp://hdl.handle.net/10722/174693
ISSN
0038-1098
2023 Impact Factor: 2.1
2023 SCImago Journal Rankings: 0.414
ISI Accession Number ID
WOS:A1992JZ71100009

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2012-11-26T08:46:54Z-
dc.date.available2012-11-26T08:46:54Z-
dc.date.issued1992en_HK
dc.identifier.citationSolid State Communications, 1992, v. 84 n. 8, p. 815-818en_HK
dc.identifier.issn0038-1098en_HK
dc.identifier.urihttp://hdl.handle.net/10722/174693-
dc.description.abstractRecent studies show that surface photovoltage (SPV) seriously affects the determination of the surface band bending by photoelectron spectroscopy. This work demonstrates that SPV is strongly affected by the leakage current which depends on the metal coverage and other experimental factors. The results of our calculation account for the observed reduction of SPV with increasing coverage and the strong photo-flux dependence of SPV. This study suggests the importance of the leakage current effect on SPV in the determination of the coverage-dependent surface band bending from photoemission experiments. © 1992.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sscen_HK
dc.relation.ispartofSolid State Communicationsen_HK
dc.titleTheoretical study of leakage current effect on surface photovoltage induced by photoemissionen_HK
dc.typeArticleen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0026943733en_HK
dc.identifier.volume84en_HK
dc.identifier.issue8en_HK
dc.identifier.spage815en_HK
dc.identifier.epage818en_HK
dc.identifier.isiWOS:A1992JZ71100009-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridChen, TP=27169708800en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.issnl0038-1098-

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