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Article: Reverse I-V characteristics of Au/semi-insulating InP (100)

TitleReverse I-V characteristics of Au/semi-insulating InP (100)
Authors
Lee, TCAu, HLChen, TPLing, CCFung, SBeling, CD
Issue Date1993
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science And Technology, 1993, v. 8 n. 5, p. 709-711 How to Cite?
DOI: http://dx.doi.org/10.1088/0268-1242/8/5/016
AbstractThe I-V characteristics of Au/semi-insulating InP (100) under reversed bias have been measured between 230 K and 290 K. A simple model based on the thermionic field emission theory (TFE) is proposed to describe this system. Based on this model, the value of the bandgap obtained from the I-V characteristics is in reasonable agreement with the literature. At room temperature, the corresponding fitted values of the barrier height Phi b and the series bulk resistance R b are 0.68+or-0.05 V and 1.320 7 Omega respectively.
Persistent Identifierhttp://hdl.handle.net/10722/174696
ISSN
0268-1242
2021 Impact Factor: 2.048
2020 SCImago Journal Rankings: 0.712
ISI Accession Number ID
WOS:A1993LB61600016

 

DC FieldValueLanguage
dc.contributor.authorLee, TCen_HK
dc.contributor.authorAu, HLen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2012-11-26T08:46:55Z-
dc.date.available2012-11-26T08:46:55Z-
dc.date.issued1993en_HK
dc.identifier.citationSemiconductor Science And Technology, 1993, v. 8 n. 5, p. 709-711en_HK
dc.identifier.issn0268-1242en_HK
dc.identifier.urihttp://hdl.handle.net/10722/174696-
dc.description.abstractThe I-V characteristics of Au/semi-insulating InP (100) under reversed bias have been measured between 230 K and 290 K. A simple model based on the thermionic field emission theory (TFE) is proposed to describe this system. Based on this model, the value of the bandgap obtained from the I-V characteristics is in reasonable agreement with the literature. At room temperature, the corresponding fitted values of the barrier height Phi b and the series bulk resistance R b are 0.68+or-0.05 V and 1.320 7 Omega respectively.en_HK
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_HK
dc.relation.ispartofSemiconductor Science and Technologyen_HK
dc.titleReverse I-V characteristics of Au/semi-insulating InP (100)en_HK
dc.typeArticleen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0268-1242/8/5/016en_HK
dc.identifier.scopuseid_2-s2.0-0027594984en_HK
dc.identifier.volume8en_HK
dc.identifier.issue5en_HK
dc.identifier.spage709en_HK
dc.identifier.epage711en_HK
dc.identifier.isiWOS:A1993LB61600016-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLee, TC=36347141200en_HK
dc.identifier.scopusauthoridAu, HL=7004152230en_HK
dc.identifier.scopusauthoridChen, TP=36442234400en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.issnl0268-1242-

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