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- Publisher Website: 10.1088/0268-1242/8/7/027
- Scopus: eid_2-s2.0-0027627522
- WOS: WOS:A1993LM47700027
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Article: The effect of the temperature dependence of the ideality factor on metal-semiconductor solar devices
Title | The effect of the temperature dependence of the ideality factor on metal-semiconductor solar devices |
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Authors | |
Issue Date | 1993 |
Publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst |
Citation | Semiconductor Science And Technology, 1993, v. 8 n. 7, p. 1357-1360 How to Cite? |
Abstract | The diode performance of Au/n-Si and Au/n-GaAs systems has been investigated within the temperature range of 100 K to 300 K. From the results of photovoltage and I-V measurements, the calculated solar cell efficiency of the Au/n-Si diode degrades significantly from the ideal case (n factor equal to 1). The change of the efficiency of the Au/n-GaAs system with temperature, however, adheres closely to the ideal case. The difference between the results of these two systems is explained by the recombination current effect, which appears to be more significant in the Au/n-Si system. |
Persistent Identifier | http://hdl.handle.net/10722/174701 |
ISSN | 2023 Impact Factor: 1.9 2023 SCImago Journal Rankings: 0.411 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Lee, TC | en_HK |
dc.contributor.author | Chen, TP | en_HK |
dc.contributor.author | Au, HL | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.date.accessioned | 2012-11-26T08:46:56Z | - |
dc.date.available | 2012-11-26T08:46:56Z | - |
dc.date.issued | 1993 | en_HK |
dc.identifier.citation | Semiconductor Science And Technology, 1993, v. 8 n. 7, p. 1357-1360 | en_HK |
dc.identifier.issn | 0268-1242 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/174701 | - |
dc.description.abstract | The diode performance of Au/n-Si and Au/n-GaAs systems has been investigated within the temperature range of 100 K to 300 K. From the results of photovoltage and I-V measurements, the calculated solar cell efficiency of the Au/n-Si diode degrades significantly from the ideal case (n factor equal to 1). The change of the efficiency of the Au/n-GaAs system with temperature, however, adheres closely to the ideal case. The difference between the results of these two systems is explained by the recombination current effect, which appears to be more significant in the Au/n-Si system. | en_HK |
dc.language | eng | en_US |
dc.publisher | Institute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst | en_HK |
dc.relation.ispartof | Semiconductor Science and Technology | en_HK |
dc.title | The effect of the temperature dependence of the ideality factor on metal-semiconductor solar devices | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.email | Beling, CD: cdbeling@hkucc.hku.hk | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.identifier.authority | Beling, CD=rp00660 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1088/0268-1242/8/7/027 | en_HK |
dc.identifier.scopus | eid_2-s2.0-0027627522 | en_HK |
dc.identifier.volume | 8 | en_HK |
dc.identifier.issue | 7 | en_HK |
dc.identifier.spage | 1357 | en_HK |
dc.identifier.epage | 1360 | en_HK |
dc.identifier.isi | WOS:A1993LM47700027 | - |
dc.publisher.place | United Kingdom | en_HK |
dc.identifier.scopusauthorid | Lee, TC=36347141200 | en_HK |
dc.identifier.scopusauthorid | Chen, TP=36442234400 | en_HK |
dc.identifier.scopusauthorid | Au, HL=7004152230 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.scopusauthorid | Beling, CD=7005864180 | en_HK |
dc.identifier.issnl | 0268-1242 | - |