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Article: Numerical study of the decay of photovoltage at metal-semiconductor interfaces

TitleNumerical study of the decay of photovoltage at metal-semiconductor interfaces
Authors
Chen, TPAu, HLLee, TCLing, CCBeling, CDFung, S
Issue Date1993
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc
Citation
Solid State Communications, 1993, v. 87 n. 12, p. 1163-1167 How to Cite?
DOI: http://dx.doi.org/10.1016/0038-1098(93)90823-6
AbstractIn this work, the decay of photovoltage at the metal-semiconductor interfaces upon cessation of illumination is investigated numerically. A simple model describing the discharging process at the interfaces is used to simulate the decay of photovoltage. The simulation gives the details of the dependence of the decay time on the temperature, the subtratee's doping concentration, the Schottky barrier height of the contacts, the leakage resistance, and the magnitude of the photo-voltage itself. © 1993.
Persistent Identifierhttp://hdl.handle.net/10722/174703
ISSN
0038-1098
2021 Impact Factor: 1.934
2020 SCImago Journal Rankings: 0.429
ISI Accession Number ID
WOS:A1993MB30500019

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorAu, HLen_HK
dc.contributor.authorLee, TCen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2012-11-26T08:46:57Z-
dc.date.available2012-11-26T08:46:57Z-
dc.date.issued1993en_HK
dc.identifier.citationSolid State Communications, 1993, v. 87 n. 12, p. 1163-1167en_HK
dc.identifier.issn0038-1098en_HK
dc.identifier.urihttp://hdl.handle.net/10722/174703-
dc.description.abstractIn this work, the decay of photovoltage at the metal-semiconductor interfaces upon cessation of illumination is investigated numerically. A simple model describing the discharging process at the interfaces is used to simulate the decay of photovoltage. The simulation gives the details of the dependence of the decay time on the temperature, the subtratee's doping concentration, the Schottky barrier height of the contacts, the leakage resistance, and the magnitude of the photo-voltage itself. © 1993.en_HK
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sscen_HK
dc.relation.ispartofSolid State Communicationsen_HK
dc.titleNumerical study of the decay of photovoltage at metal-semiconductor interfacesen_HK
dc.typeArticleen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/0038-1098(93)90823-6-
dc.identifier.scopuseid_2-s2.0-0027659144en_HK
dc.identifier.volume87en_HK
dc.identifier.issue12en_HK
dc.identifier.spage1163en_HK
dc.identifier.epage1167en_HK
dc.identifier.isiWOS:A1993MB30500019-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridChen, TP=36442234400en_HK
dc.identifier.scopusauthoridAu, HL=7004152230en_HK
dc.identifier.scopusauthoridLee, TC=36347141200en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.issnl0038-1098-

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