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Article: Temperature dependence of photoluminescence in GaAs/AlGaAs asymmetric coupled double quantum wells structure

TitleTemperature dependence of photoluminescence in GaAs/AlGaAs asymmetric coupled double quantum wells structure
Authors
Xu, ShijieLiu, JianLi, GuohuaZheng, HouzhiJiang, Desheng
Issue Date1994
Citation
Hongwai Yu Haomibo Xuebao/Journal Of Infrared And Millimeter Waves, 1994, v. 13 n. 1, p. 77-80 How to Cite?
AbstractPhotoluminescence spectra of GaAS/AlGaAs asymmetric coupled double quantum wells pin structure were measured at various temperatures. Different temperature dependence of heavy-hole excitonic peaks intensity in narrow and wide well was observed. The results showed that the thermionic emission of the electrons in the narrow well results in more rapid decreasing of the luminescence intensity. The special temperature dependence of light-hole excitonic peaks intensity in the wide well and its mechanism were studied as well.
Persistent Identifierhttp://hdl.handle.net/10722/174706
ISSN
1001-9014
2023 Impact Factor: 0.6
2023 SCImago Journal Rankings: 0.198

 

DC FieldValueLanguage
dc.contributor.authorXu, Shijieen_US
dc.contributor.authorLiu, Jianen_US
dc.contributor.authorLi, Guohuaen_US
dc.contributor.authorZheng, Houzhien_US
dc.contributor.authorJiang, Deshengen_US
dc.date.accessioned2012-11-26T08:46:58Z-
dc.date.available2012-11-26T08:46:58Z-
dc.date.issued1994en_US
dc.identifier.citationHongwai Yu Haomibo Xuebao/Journal Of Infrared And Millimeter Waves, 1994, v. 13 n. 1, p. 77-80en_US
dc.identifier.issn1001-9014en_US
dc.identifier.urihttp://hdl.handle.net/10722/174706-
dc.description.abstractPhotoluminescence spectra of GaAS/AlGaAs asymmetric coupled double quantum wells pin structure were measured at various temperatures. Different temperature dependence of heavy-hole excitonic peaks intensity in narrow and wide well was observed. The results showed that the thermionic emission of the electrons in the narrow well results in more rapid decreasing of the luminescence intensity. The special temperature dependence of light-hole excitonic peaks intensity in the wide well and its mechanism were studied as well.en_US
dc.languageengen_US
dc.relation.ispartofHongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Wavesen_US
dc.titleTemperature dependence of photoluminescence in GaAs/AlGaAs asymmetric coupled double quantum wells structureen_US
dc.typeArticleen_US
dc.identifier.emailXu, Shijie: sjxu@hku.hken_US
dc.identifier.authorityXu, Shijie=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0028378371en_US
dc.identifier.volume13en_US
dc.identifier.issue1en_US
dc.identifier.spage77en_US
dc.identifier.epage80en_US
dc.publisher.placeChinaen_US
dc.identifier.scopusauthoridXu, Shijie=7404439005en_US
dc.identifier.scopusauthoridLiu, Jian=36077311800en_US
dc.identifier.scopusauthoridLi, Guohua=8161794300en_US
dc.identifier.scopusauthoridZheng, Houzhi=7403440708en_US
dc.identifier.scopusauthoridJiang, Desheng=7401574189en_US
dc.identifier.issnl1001-9014-

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