Growth dynamics studied by RHEED during Si Ge epitaxy from gaseous hydrides

Abstract

Si and Ge epitaxial growth from disilane and germane in a gas-source molecular beam epitaxy (GSMBE) system is followed in situ by reflection high-energy electron diffraction (RHEED) intensity oscillations. During Ge homoepitaxy, the growth rate on a Ge(100) substrate is found to be limited by surface hydrogen desorption below 350°C and by hydride adsorption above this temperature. Ge heteroepitaxy on Si results in incomplete layer growth leaving exposed Si at the surface during the initial stages of growth. Therefore, a gradual change in the observed Si surface concentration is seen as growth proceeds. Si heteroepitaxy on Ge follows the Volmer-Weber growth mode and proceeds via island formation. This, combined with Ge surface segregation, results in a slow decrease of the Ge surface population at the growth front. During heteroepitaxial growth, hydride reaction rates differ on Si and Ge surfaces, and therefore a changing concentration of the surface species is manifest as a gradual change in the observed oscillation frequency. This effect, observed during the early stages of growth, shows strong temperature dependence, consistent with previous observations on SiGe alloys. Following several layers of growth, however, the surfaces become rough. The influence of this roughness on the oscillation frequency is also discussed. © 1994.