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Article: Silicon/silicon-germanium multiple quantum wells grown by gas-source molecular beam epitaxy: Hydrogen coverage and interfacial abruptness
Title | Silicon/silicon-germanium multiple quantum wells grown by gas-source molecular beam epitaxy: Hydrogen coverage and interfacial abruptness |
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Authors | |
Issue Date | 1996 |
Publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro |
Citation | Journal Of Crystal Growth, 1996, v. 164 n. 1-4, p. 241-247 How to Cite? |
Abstract | We have grown silicon-germanium/silicon (Si1-xGex/Si, x < 0.30) multiple quantum wells (MQWs) by gas-source molecular beam epitaxy (GSMBE) using disilane (Si2H6) and germane (GeH4) as source gases, and have characterized their structural properties by secondary ion mass spectroscopy (SIMS), X-ray diffraction (XRD) rocking curve and transmission electron microscopy (TEM) techniques. A substrate temperature of 520°C was maintained during growth resulting in a Si and SiGe growth rate-limited primarily by hydrogen desorption kinetics. Under these conditions, surface hydrogen is expected to function as a surfactant thereby enhancing interfacial abruptness at the Si/SiGe interface through suppression of Ge surface segregation. Independent of Ge composition in the Si1-xGex wells, we find abrupt interfaces, as determined from XRD measurements, and sharp SIMS decay lengths of the order of 2.5 nm/decade. For nominally identical Si barriers in all samples examined, we find thicker barriers for the structures with higher Ge content in the well. For the specimens with x = 0.30 in the wells, we find a noticeable well plus barrier period variation of approximately 5%-10% as determined from XRD rocking curves, as well as TEM evidence for the onset of strain relaxation via interface undulation formation in the first quantum well of the structure. A discussion of these results in terms of hydrogen desorption kinetics is presented. |
Persistent Identifier | http://hdl.handle.net/10722/174727 |
ISSN | 2023 Impact Factor: 1.7 2023 SCImago Journal Rankings: 0.379 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Fernández, JM | en_US |
dc.contributor.author | Hart, L | en_US |
dc.contributor.author | Zhang, XM | en_US |
dc.contributor.author | Xie, MH | en_US |
dc.contributor.author | Zhang, J | en_US |
dc.contributor.author | Joyce, BA | en_US |
dc.date.accessioned | 2012-11-26T08:47:06Z | - |
dc.date.available | 2012-11-26T08:47:06Z | - |
dc.date.issued | 1996 | en_US |
dc.identifier.citation | Journal Of Crystal Growth, 1996, v. 164 n. 1-4, p. 241-247 | en_US |
dc.identifier.issn | 0022-0248 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/174727 | - |
dc.description.abstract | We have grown silicon-germanium/silicon (Si1-xGex/Si, x < 0.30) multiple quantum wells (MQWs) by gas-source molecular beam epitaxy (GSMBE) using disilane (Si2H6) and germane (GeH4) as source gases, and have characterized their structural properties by secondary ion mass spectroscopy (SIMS), X-ray diffraction (XRD) rocking curve and transmission electron microscopy (TEM) techniques. A substrate temperature of 520°C was maintained during growth resulting in a Si and SiGe growth rate-limited primarily by hydrogen desorption kinetics. Under these conditions, surface hydrogen is expected to function as a surfactant thereby enhancing interfacial abruptness at the Si/SiGe interface through suppression of Ge surface segregation. Independent of Ge composition in the Si1-xGex wells, we find abrupt interfaces, as determined from XRD measurements, and sharp SIMS decay lengths of the order of 2.5 nm/decade. For nominally identical Si barriers in all samples examined, we find thicker barriers for the structures with higher Ge content in the well. For the specimens with x = 0.30 in the wells, we find a noticeable well plus barrier period variation of approximately 5%-10% as determined from XRD rocking curves, as well as TEM evidence for the onset of strain relaxation via interface undulation formation in the first quantum well of the structure. A discussion of these results in terms of hydrogen desorption kinetics is presented. | en_US |
dc.language | eng | en_US |
dc.publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro | en_US |
dc.relation.ispartof | Journal of Crystal Growth | en_US |
dc.title | Silicon/silicon-germanium multiple quantum wells grown by gas-source molecular beam epitaxy: Hydrogen coverage and interfacial abruptness | en_US |
dc.type | Article | en_US |
dc.identifier.email | Xie, MH: mhxie@hku.hk | en_US |
dc.identifier.authority | Xie, MH=rp00818 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.scopus | eid_2-s2.0-0030194082 | en_US |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0030194082&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 164 | en_US |
dc.identifier.issue | 1-4 | en_US |
dc.identifier.spage | 241 | en_US |
dc.identifier.epage | 247 | en_US |
dc.identifier.isi | WOS:A1996UY96000039 | - |
dc.publisher.place | Netherlands | en_US |
dc.identifier.scopusauthorid | Fernández, JM=7404575272 | en_US |
dc.identifier.scopusauthorid | Hart, L=7201500367 | en_US |
dc.identifier.scopusauthorid | Zhang, XM=8521572500 | en_US |
dc.identifier.scopusauthorid | Xie, MH=7202255416 | en_US |
dc.identifier.scopusauthorid | Zhang, J=36062542300 | en_US |
dc.identifier.scopusauthorid | Joyce, BA=7102210065 | en_US |
dc.identifier.issnl | 0022-0248 | - |