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Article: New hydrogen desorption kinetics from vicinal Si(0 0 1) surfaces observed by reflectance anisotropy spectroscopy

TitleNew hydrogen desorption kinetics from vicinal Si(0 0 1) surfaces observed by reflectance anisotropy spectroscopy
Authors
Zhang, JLees, AKTaylor, AGXie, MHJoyce, BASobiesierksi, ZWestwood, DI
Issue Date1997
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
Citation
Journal Of Crystal Growth, 1997, v. 175-176 PART 1, p. 477-480 How to Cite?
AbstractReflectance anisotropy (RA) from vicinal Si (0 0 1) surfaces is shown to be strongly influenced by the domain structure on the (2X1) + (1X2) reconstructed surface and by adsorbates such as hydrogen. Utilizing these adsorbate effects by monitoring the time dependence of RA from single domain vicinal surfaces, an accurate determination of surface hydrogen coverage can be made. We report a zeroth order coverage dependence of hydrogen desorption which is attributed to a desorption pathway incorporating a saturated and localised precursor state in which the diffusion/migration of surface hydrogen is not the rate limiting step.
Persistent Identifierhttp://hdl.handle.net/10722/174741
ISSN
0022-0248
2023 Impact Factor: 1.7
2023 SCImago Journal Rankings: 0.379
ISI Accession Number ID
WOS:A1997XL45100084
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZhang, Jen_US
dc.contributor.authorLees, AKen_US
dc.contributor.authorTaylor, AGen_US
dc.contributor.authorXie, MHen_US
dc.contributor.authorJoyce, BAen_US
dc.contributor.authorSobiesierksi, Zen_US
dc.contributor.authorWestwood, DIen_US
dc.date.accessioned2012-11-26T08:47:11Z-
dc.date.available2012-11-26T08:47:11Z-
dc.date.issued1997en_US
dc.identifier.citationJournal Of Crystal Growth, 1997, v. 175-176 PART 1, p. 477-480en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://hdl.handle.net/10722/174741-
dc.description.abstractReflectance anisotropy (RA) from vicinal Si (0 0 1) surfaces is shown to be strongly influenced by the domain structure on the (2X1) + (1X2) reconstructed surface and by adsorbates such as hydrogen. Utilizing these adsorbate effects by monitoring the time dependence of RA from single domain vicinal surfaces, an accurate determination of surface hydrogen coverage can be made. We report a zeroth order coverage dependence of hydrogen desorption which is attributed to a desorption pathway incorporating a saturated and localised precursor state in which the diffusion/migration of surface hydrogen is not the rate limiting step.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgroen_US
dc.relation.ispartofJournal of Crystal Growthen_US
dc.titleNew hydrogen desorption kinetics from vicinal Si(0 0 1) surfaces observed by reflectance anisotropy spectroscopyen_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0031147612en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031147612&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume175-176en_US
dc.identifier.issuePART 1en_US
dc.identifier.spage477en_US
dc.identifier.epage480en_US
dc.identifier.isiWOS:A1997XL45100084-
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridZhang, J=36062542300en_US
dc.identifier.scopusauthoridLees, AK=7202900980en_US
dc.identifier.scopusauthoridTaylor, AG=7405891545en_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridJoyce, BA=7102210065en_US
dc.identifier.scopusauthoridSobiesierksi, Z=11039743600en_US
dc.identifier.scopusauthoridWestwood, DI=7004675362en_US
dc.identifier.issnl0022-0248-

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