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Article: Refined atomic structure of Si (111)-(3 1/2 × 3 1/2) R30°-Ga surface

TitleRefined atomic structure of Si (111)-(3 1/2 × 3 1/2) R30°-Ga surface
Authors
Deng, BCXu, GChen, WHHe, YJXie, MHTang, SX
KeywordsAtomic Structure
Silicon
Surface
Issue Date2001
Citation
Pan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 2001, v. 22 n. 4, p. 427-430 How to Cite?
AbstractRefined atomic structure of the Si (111)-(3 1/2 × 3 1/2) R30°-Ga surface was obtained by the quantitative analysis of the intensity-energy spectra from the measurement of a total of 16 symmetrical inequivalent beams through low-energy electron diffraction in the energy range of 30-360 eV. Ga atom is located on the hollow site above the second-layer Si atom, but the distance between Ga adatom and the first Si layer is 0.144 nm. Detailed atomic coordinates for atoms in the first 7 layers of the best-fit structure were given. The average reliable factor of the 16 beams was given, showing that the optimum structure is quite reliable. The calculating results are in good agreement with the experimental data.
Persistent Identifierhttp://hdl.handle.net/10722/174805
ISSN
0253-4177
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorDeng, BCen_US
dc.contributor.authorXu, Gen_US
dc.contributor.authorChen, WHen_US
dc.contributor.authorHe, YJen_US
dc.contributor.authorXie, MHen_US
dc.contributor.authorTang, SXen_US
dc.date.accessioned2012-11-26T08:47:33Z-
dc.date.available2012-11-26T08:47:33Z-
dc.date.issued2001en_US
dc.identifier.citationPan Tao Ti Hsueh Pao/Chinese Journal Of Semiconductors, 2001, v. 22 n. 4, p. 427-430en_US
dc.identifier.issn0253-4177en_US
dc.identifier.urihttp://hdl.handle.net/10722/174805-
dc.description.abstractRefined atomic structure of the Si (111)-(3 1/2 × 3 1/2) R30°-Ga surface was obtained by the quantitative analysis of the intensity-energy spectra from the measurement of a total of 16 symmetrical inequivalent beams through low-energy electron diffraction in the energy range of 30-360 eV. Ga atom is located on the hollow site above the second-layer Si atom, but the distance between Ga adatom and the first Si layer is 0.144 nm. Detailed atomic coordinates for atoms in the first 7 layers of the best-fit structure were given. The average reliable factor of the 16 beams was given, showing that the optimum structure is quite reliable. The calculating results are in good agreement with the experimental data.en_US
dc.languageengen_US
dc.relation.ispartofPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductorsen_US
dc.subjectAtomic Structureen_US
dc.subjectSiliconen_US
dc.subjectSurfaceen_US
dc.titleRefined atomic structure of Si (111)-(3 1/2 × 3 1/2) R30°-Ga surfaceen_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0035322372en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0035322372&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume22en_US
dc.identifier.issue4en_US
dc.identifier.spage427en_US
dc.identifier.epage430en_US
dc.publisher.placeChinaen_US
dc.identifier.scopusauthoridDeng, BC=7101938147en_US
dc.identifier.scopusauthoridXu, G=7404263906en_US
dc.identifier.scopusauthoridChen, WH=7409644692en_US
dc.identifier.scopusauthoridHe, YJ=24476460300en_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridTang, SX=23985983200en_US
dc.identifier.issnl0253-4177-

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